DocumentNumber:MRF7S21080H FreescaleSemiconductor Rev. 1, 3/2011 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF7S21080HR3 Designed for CDMA base station applications with frequencies from 2110 to MRF7S21080HSR3 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio applications. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 2110--2170MHz,22WAVG.,28V 800 mA, P = 22Watts Avg., f = 2167.5MHz, IQ MagnitudeClipping, out Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% SINGLEW--CDMA Probability onCCDF. LATERALN--CHANNEL Power Gain 18 dB RFPOWERMOSFETs Drain Efficiency 32% DeviceOutput Signal PAR 6.5dB 0.01%Probability onCCDF ACPR 5MHz Offset --38dBc in3.84MHz Channel Bandwidth Capable of Handling10:1 VSWR, 32Vdc, 2140MHz, 80Watts CW Peak Tuned Output Power P 1 dB CompressionPoint 80Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability CASE465--06,STYLE1 NI--780 CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters MRF7S21080HR3 Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor Digital PredistortionError CorrectionSystems RoHSCompliant CASE465A--06,STYLE1 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. NI--780S MRF7S21080HSR3 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 79C, 79 W CW 0.60 Case Temperature 75C, 22 W CW 0.65 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1C (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2 3 Vdc GS(th) (V =10Vdc,I =174Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =800mAdc) DS D (1) Fixture Gate Quiescent Voltage V 4 5.5 7 Vdc GG(Q) (V =28Vdc,I =800 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =1.74Adc) GS D (2) DynamicCharacteristics Reverse TransferCapacitance C 0.64 pF rss (V =28Vdc30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 296 pF oss (V =28Vdc30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 160 pF iss (V =28Vdc,V =0Vdc30 mV(rms)ac 1 MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =28Vdc,I =800mA, P =22 W Avg., f =2167.5 MHz, DD DQ out Single--CarrierW--CDMA, IQ Magnitude Clipping, PAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5MHzOffset. PowerGain G 16.5 18 19.5 dB ps Drain Efficiency 30 32 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.7 6.5 dB Adjacent ChannelPowerRatio ACPR --38 --35 dBc Input Return Loss IRL --16 --9 dB 1. V =2xV . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. (continued) MRF7S21080HR3MRF7S21080HSR3 RF DeviceData Freescale Semiconductor 2