DocumentNumber:MRF7S19120N FreescaleSemiconductor Rev. 3, 3/2011 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990MHz. CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1200mA, P = 36Watts Avg., f = 1990MHz, IQ MagnitudeClipping, out 1930--1990MHz,36WAVG.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% Probability onCCDF. SINGLEW--CDMA Power Gain 18dB LATERALN--CHANNEL DrainEfficiency 32% RFPOWERMOSFET DeviceOutput SignalPAR 6.1dB 0.01%Probability onCCDF ACPR 5MHz Offset --38.5dBc in3.84MHz ChannelBandwidth Capableof Handling10:1VSWR, 32Vdc, 1960MHz, 120Watts CW Output Power P 1dB CompressionPoint 120W CW out Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use CASE1730--02 IntegratedESD Protection TO--270WBL--4 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C PLASTIC Operation Designedfor DigitalPredistortionError CorrectionSystems 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,120W CW 0.43 CaseTemperature80C,36W CW 0.51 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =270Adc) DS D GateQuiescentVoltage V 2 2.7 3.5 Vdc GS(Q) (V =28Vdc,I =1200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.15 0.275 0.35 Vdc DS(on) (V =10Vdc,I =2.7Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 1.65 pF rss (V =28Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 600 pF oss (V =28Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 1.03 pF iss (V =28Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1200mA,P =36W Avg.,f=1990MHz,Single--Carrier DD DQ out W--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz Channel Bandwidth 5MHzOffset. PowerGain G 16.5 18 19.5 dB ps DrainEfficiency 30 32 36 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.7 6.1 dB AdjacentChannelPowerRatio ACPR --38.5 --35.5 dBc InputReturnLoss IRL --10 --7 dB 1. Partinternally matchedbothoninputandoutput. (continued) MRF7S19120NR1 RF DeviceData FreescaleSemiconductor 2