X-On Electronics has gained recognition as a prominent supplier of MRF7S19120NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF7S19120NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF7S19120NR1 NXP

MRF7S19120NR1 electronic component of NXP
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Part No.MRF7S19120NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin TO-270 W T/R
Datasheet: MRF7S19120NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 83.5236 ea
Line Total: USD 41761.8 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
   
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We are delighted to provide the MRF7S19120NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF7S19120NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF7S19120N FreescaleSemiconductor Rev. 3, 3/2011 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990MHz. CanbeusedinClassABandClass Cforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1200mA, P = 36Watts Avg., f = 1990MHz, IQ MagnitudeClipping, out 1930--1990MHz,36WAVG.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% Probability onCCDF. SINGLEW--CDMA Power Gain 18dB LATERALN--CHANNEL DrainEfficiency 32% RFPOWERMOSFET DeviceOutput SignalPAR 6.1dB 0.01%Probability onCCDF ACPR 5MHz Offset --38.5dBc in3.84MHz ChannelBandwidth Capableof Handling10:1VSWR, 32Vdc, 1960MHz, 120Watts CW Output Power P 1dB CompressionPoint 120W CW out Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use CASE1730--02 IntegratedESD Protection TO--270WBL--4 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C PLASTIC Operation Designedfor DigitalPredistortionError CorrectionSystems 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,120W CW 0.43 CaseTemperature80C,36W CW 0.51 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =270Adc) DS D GateQuiescentVoltage V 2 2.7 3.5 Vdc GS(Q) (V =28Vdc,I =1200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.15 0.275 0.35 Vdc DS(on) (V =10Vdc,I =2.7Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 1.65 pF rss (V =28Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 600 pF oss (V =28Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 1.03 pF iss (V =28Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1200mA,P =36W Avg.,f=1990MHz,Single--Carrier DD DQ out W--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz Channel Bandwidth 5MHzOffset. PowerGain G 16.5 18 19.5 dB ps DrainEfficiency 30 32 36 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.7 6.1 dB AdjacentChannelPowerRatio ACPR --38.5 --35.5 dBc InputReturnLoss IRL --10 --7 dB 1. Partinternally matchedbothoninputandoutput. (continued) MRF7S19120NR1 RF DeviceData FreescaleSemiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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