Ordering number : ENA1604A ATP108 P-Channel Power MOSFET ATP108 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --40 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--40V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.5 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--35A 65 S DS D R (on)1 I =--35A, V =--10V 8 10.4 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--18A, V =--4.5V 11.5 16.5 m DS D GS Input Capacitance Ciss 3850 pF Output Capacitance Coss V =--20V, f=1MHz 560 pF DS Reverse Transfer Capacitance Crss 390 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 340 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 340 ns d Fall Time t 290 ns f Total Gate Charge Qg 79.5 nC Gate-to-Source Charge Qgs V =--20V, V =--10V, I =--70A 20 nC DS GS D Gate-to-Drain Miller Charge Qgd 15 nC Diode Forward Voltage V I =--70A, V =0V --1.05 --1.5 V SD S GS Switching Time Test Circuit V V = --20V DD IN 0V --10V I = --35A D V IN R =0.57 L D V OUT PW=10s D.C.1% G ATP108 P.G 50 S Ordering Information Device Package Shipping memo ATP108-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1604-2/7