Ordering number : ENA1754A ATP112 P-Channel Power MOSFET ATP112 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--13A 24 S DS D R (on)1 I =--13A, V =--10V 33 43 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--7A, V =--4.5V 42 59 m DS D GS R (on)3 I =--3.5A, V =--4V 45 63 m DS D GS Input Capacitance Ciss 1450 pF Output Capacitance Coss V =--20V, f=1MHz 155 pF DS Reverse Transfer Capacitance Crss 125 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 80 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 150 ns d Fall Time t 120 ns f Total Gate Charge Qg 33.5 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--25A 5.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 7.9 nC Diode Forward Voltage V I =--25A, V =0V --0.97 --1.5 V SD S GS Switching Time Test Circuit V = --30V V IN DD 0V --10V I =13A D V IN R =2.3 L D V OUT PW=10s D.C.1% G ATP112 P.G 50 S Ordering Information Device Package Shipping memo ATP112-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1754-2/7