Ordering number : ENA1711A ATP114 P-Channel Power MOSFET ATP114 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--28A 65 S DS D R (on)1 I =--28A, V =--10V 12 16 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--14A, V =--4.5V 15 21 m DS D GS R (on)3 I =--7A, V =--4V 16.5 24 m DS D GS Input Capacitance Ciss 4000 pF Output Capacitance Coss V =--20V, f=1MHz 400 pF DS Reverse Transfer Capacitance Crss 315 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 200 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 450 ns d Fall Time t 300 ns f Total Gate Charge Qg 92 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--55Ap 15 nC DS GS D Gate-to-Drain Miller Charge Qgd 15.5 nC Diode Forward Voltage V I =--55A, V =0V --0.95 --1.5 V SD S GS Switching Time Test Circuit V V = --30V DD IN 0V --10V I = --28A D V IN R =1.07 L D V OUT PW=10s D.C.1% G ATP114 P.G 50 S Ordering Information Device Package Shipping memo ATP114-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1711-2/7