X-On Electronics has gained recognition as a prominent supplier of MRF6VP3450HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6VP3450HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6VP3450HR5 NXP

MRF6VP3450HR5 electronic component of NXP
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Part No.MRF6VP3450HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET VHV6 450W 860MHZ NI1230H
Datasheet: MRF6VP3450HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 214.1833
2 : USD 191.3563
3 : USD 188.0487
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 312.6129
N/A

Obsolete
   
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RoHS - XON
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Voltage
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Gate-Source Breakdown Voltage
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Cnhts
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We are delighted to provide the MRF6VP3450HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6VP3450HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6VP3450H FreescaleSemiconductor Rev. 4, 4/2010 TechnicalData RFPowerFieldEffectTransistors MRF6VP3450HR6 N--Channel Enhancement--ModeLateral MOSFETs MRF6VP3450HR5 Designed for broadband commercial and industrial applications with MRF6VP3450HSR6 frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier MRF6VP3450HSR5 applications in50volt analogor digitaltelevisiontransmitter equipment. TypicalDVB--T OFDM Performance: V =50Volts,I = 1400mA, DD DQ 860MHz,450W,50V P = 90Watts Avg., f = 860MHz, 8K Mode, 64QAM out LATERALN--CHANNEL Power Gain 22.5dB DrainEfficiency 28% BROADBAND ACPR 4MHz Offset --62dBc 4kHz Bandwidth RFPOWERMOSFETs TypicalBroadbandTwo--TonePerformance: V =50Volts,I = 1400mA, DD DQ P = 450Watts PEP, f = 470--860MHz out Power Gain 22dB DrainEfficiency 44% IM3 --29dBc Capableof Handling10:1VSWR, AllPhaseAngles, 50Vdc, 860MHz: 450Watts CW 90Watts Avg. (DVB--T OFDM Signal, 10dB PAR, 7.61MHz Channel CASE375D--05,STYLE1 Bandwidth) NI--1230 Features MRF6VP3450HR6(HR5) CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Input Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Designedfor Push--PullOperation Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE375E--04,STYLE1 Operation NI--1230S RoHSCompliant MRF6VP3450HSR6(HSR5) InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. R5Suffix = 50Units per 56mm, 13inchReel. PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase CaseTemperature80C,90W CW R 0.27 C/W JC CaseTemperature44C,450W CW 0.25 CaseTemperature62C,450W Pulsed,50 sec PulseWidth,2.5%Duty Cycle Z 0.04 JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =50mA,V =0Vdc) D GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1 1.6 2.5 Vdc GS(th) (V =10Vdc,I =320 Adc) DS D (4) GateQuiescentVoltage V 2 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =1400mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =1.58Adc) GS D (3,5) DynamicCharacteristics ReverseTransferCapacitance C 0.92 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 54.5 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 373 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (4) FunctionalTests (InFreescaleBroadbandTestFixture,50ohmsystem)V =50Vdc,I =1400mA,P =90W Avg.,f=860MHz, DD DQ out DVB--TOFDM SingleChannel.ACPRmeasuredin7.61MHz ChannelBandwidth 4MHz Offset 4kHz Bandwidth. PowerGain G 21.5 22.5 24.5 dB ps DrainEfficiency 26 28 % D AdjacentChannelPowerRatio ACPR --62 --59 dBc InputReturnLoss IRL --4 --2 dB 1. MTTFcalculatoravailableat

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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