DocumentNumber:MRF6VP3450H FreescaleSemiconductor Rev. 4, 4/2010 TechnicalData RFPowerFieldEffectTransistors MRF6VP3450HR6 N--Channel Enhancement--ModeLateral MOSFETs MRF6VP3450HR5 Designed for broadband commercial and industrial applications with MRF6VP3450HSR6 frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier MRF6VP3450HSR5 applications in50volt analogor digitaltelevisiontransmitter equipment. TypicalDVB--T OFDM Performance: V =50Volts,I = 1400mA, DD DQ 860MHz,450W,50V P = 90Watts Avg., f = 860MHz, 8K Mode, 64QAM out LATERALN--CHANNEL Power Gain 22.5dB DrainEfficiency 28% BROADBAND ACPR 4MHz Offset --62dBc 4kHz Bandwidth RFPOWERMOSFETs TypicalBroadbandTwo--TonePerformance: V =50Volts,I = 1400mA, DD DQ P = 450Watts PEP, f = 470--860MHz out Power Gain 22dB DrainEfficiency 44% IM3 --29dBc Capableof Handling10:1VSWR, AllPhaseAngles, 50Vdc, 860MHz: 450Watts CW 90Watts Avg. (DVB--T OFDM Signal, 10dB PAR, 7.61MHz Channel CASE375D--05,STYLE1 Bandwidth) NI--1230 Features MRF6VP3450HR6(HR5) CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Input Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Designedfor Push--PullOperation Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE375E--04,STYLE1 Operation NI--1230S RoHSCompliant MRF6VP3450HSR6(HSR5) InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. R5Suffix = 50Units per 56mm, 13inchReel. PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase CaseTemperature80C,90W CW R 0.27 C/W JC CaseTemperature44C,450W CW 0.25 CaseTemperature62C,450W Pulsed,50 sec PulseWidth,2.5%Duty Cycle Z 0.04 JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =50mA,V =0Vdc) D GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1 1.6 2.5 Vdc GS(th) (V =10Vdc,I =320 Adc) DS D (4) GateQuiescentVoltage V 2 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =1400mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =1.58Adc) GS D (3,5) DynamicCharacteristics ReverseTransferCapacitance C 0.92 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 54.5 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 373 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (4) FunctionalTests (InFreescaleBroadbandTestFixture,50ohmsystem)V =50Vdc,I =1400mA,P =90W Avg.,f=860MHz, DD DQ out DVB--TOFDM SingleChannel.ACPRmeasuredin7.61MHz ChannelBandwidth 4MHz Offset 4kHz Bandwidth. PowerGain G 21.5 22.5 24.5 dB ps DrainEfficiency 26 28 % D AdjacentChannelPowerRatio ACPR --62 --59 dBc InputReturnLoss IRL --4 --2 dB 1. MTTFcalculatoravailableat