X-On Electronics has gained recognition as a prominent supplier of MRF6VP41KHR7 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6VP41KHR7 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6VP41KHR7 NXP

MRF6VP41KHR7 electronic component of NXP
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Part No.MRF6VP41KHR7
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
Datasheet: MRF6VP41KHR7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 893.5457 ea
Line Total: USD 22338.64 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
   
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We are delighted to provide the MRF6VP41KHR7 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6VP41KHR7 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6VP41KH FreescaleSemiconductor Rev. 6, 4/2012 Technical Data RFPowerFieldEffectTransistors MRF6VP41KHR6 N--Channel Enhancement--Mode Lateral MOSFETs MRF6VP41KHSR6 Designed for pulse and CW wideband applications with frequencies up to 500MHz.Devicesareunmatchedandaresuitableforuseinindustrial, medical and scientific applications. 10--500MHz,1000W,50V LATERALN--CHANNEL Typical Pulse Performance at 450 MHz: V =50Volts,I = 150 mA, DD DQ BROADBAND P = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, out Duty Cycle= 20% RFPOWERMOSFETs Power Gain 20 dB Drain Efficiency 64% Capable of Handling 10:1 VSWR 50 Vdc, 450 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling CASE375D--05,STYLE1 Qualified Up to a Maximum of 50 V Operation DD NI--1230 Integrated ESD Protection MRF6VP41KHR6 Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. CASE375E--04,STYLE1 NI--1230S MRF6VP41KHSR6 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --6, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J (3) TotalDevice Dissipation T =25C, CW only P 1333 W C D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalImpedance, Junction to Case Z 0.03 C/W JC Pulse: Case Temperature 80C, 1000 W Peak, 100 sec Pulse Width, 20%Duty Cycle, (3) 450 MHz ThermalResistance, Junction to Case R 0.15 C/W JC CW: Case Temperature 84C, 1000 W CW, 352.2 MHz Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000 V Machine Model(perEIA/JESD22--A115) A, passes 125 V Charge Device Model(perJESD22--C101) IV, passes 2000 V Table4.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =300 mA, V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =1600 Adc) DS D (5) Gate Quiescent Voltage V 1.5 2.2 3.5 Vdc GS(Q) (V =50Vdc,I =150 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (4) DynamicCharacteristics Reverse TransferCapacitance C 3.3 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 147 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 506 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (5) FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle PowerGain G 19 20 22 dB ps Drain Efficiency 60 64 % D Input Return Loss IRL --18 --9 dB 1. MTTFcalculatoravailable at

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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