DocumentNumber:MRF6VP21KH FreescaleSemiconductor Rev. 4, 4/2010 Technical Data RFPowerFieldEffectTransistor N--Channel Enhancement--Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235MHz.Deviceis unmatchedandis suitablefor usein industrial,medical and scientific applications. Typical Pulsed Performance at 225 MHz: V =50Volts,I = 150 mA, DD DQ P = 1000 Watts Peak (200 W Avg.), Pulse Width = 100sec, out 10--235MHz,1000W,50V Duty Cycle= 20% LATERALN--CHANNEL Power Gain 24 dB Drain Efficiency 67.5% BROADBAND RFPOWERMOSFET Capable of Handling 10:1 VSWR, 50 Vdc, 225 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 V Operation DD Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation CASE375D--05,STYLE1 RoHS Compliant NI--1230 In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. PARTISPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --6, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100sec Pulse Width, 20%Duty Cycle Z 0.03 C/W JC 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--Source Leakage Current I 20 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =300 mA, V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics (1) Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =1600Adc) DS D (2) Gate Quiescent Voltage V 1.5 2.2 3.5 Vdc GS(Q) (V =50Vdc,I =150 mAdc, Measured in FunctionalTest) DD D (1) Drain--Source On--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (1) DynamicCharacteristics Reverse TransferCapacitance C 3.3 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 147 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 506 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (2) FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 225 MHz, DD DQ out 100sec Pulse Width, 20% Duty Cycle PowerGain G 22 24 26 dB ps Drain Efficiency 65 67.5 % D Input Return Loss IRL --15 --9 dB 1. Each side of device measured separately. 2. Measurement made with device in push--pullconfiguration. MRF6VP21KHR6 RF DeviceData Freescale Semiconductor 2