X-On Electronics has gained recognition as a prominent supplier of MRF6VP2600HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6VP2600HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6VP2600HR5 NXP

MRF6VP2600HR5 electronic component of NXP
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Part No.MRF6VP2600HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors VHV6 600W 225MHZ NI1230
Datasheet: MRF6VP2600HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 50
Multiples : 50
50 : USD 350.1109
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 273.1709
5 : USD 269.1641
10 : USD 269.1641
25 : USD 269.1641
100 : USD 269.1256
250 : USD 256.1422
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the MRF6VP2600HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6VP2600HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6VP2600H FreescaleSemiconductor Rev. 5.1, 7/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF6VP2600HR6 Designedprimarily for widebandapplications withfrequencies upto 500MHz. Deviceis unmatchedandis suitableforuseinbroadcastapplications. Typical DVB--T OFDM Performance: V =50Volts,I = 2600mA, DD DQ P = 125Watts Avg., f = 225MHz, ChannelBandwidth= 7.61MHz, out 2--500MHz,600W,50V Input Signal PAR = 9.3dB 0.01%Probability onCCDF. LATERALN--CHANNEL Power Gain 25dB BROADBAND DrainEfficiency 28.5% RFPOWERMOSFET ACPR 4MHz Offset --61dBc 4kHz Bandwidth Typical PulsedPerformance: V =50Volts,I = 2600mA, DD DQ P = 600Watts Peak, f = 225MHz, PulseWidth= 100 sec, Duty out Cycle= 20% Power Gain 25.3dB Drain Efficiency 59% Capableof Handling10:1VSWR, 50Vdc, 225MHz, 600Watts Peak Power, PulseWidth= 100 sec, Duty Cycle= 20% Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE375D--05,STYLE1 CW OperationCapability withAdequateCooling NI--1230 QualifiedUptoaMaximum of 50V Operation DD PARTISPUSH--PULL IntegratedESD Protection Designedfor Push--Pull Operation Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RoHSCompliant InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature99C,125W CW,225MHz,50Vdc,I =2600mA 0.20 DQ CaseTemperature64C,610W CW,352.2MHz,50Vdc,I =150mA 0.14 DQ CaseTemperature81C,610W CW,88--108MHz,50Vdc,I =150mA 0.16 DQ 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =150mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1 1.65 3 Vdc GS(th) (V =10Vdc,I =800 Adc) DS D (2) GateQuiescentVoltage V 1.5 2.7 3.5 Vdc GS(Q) (V =50Vdc,I =2600mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 1.7 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 101 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 287 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =2600mA,P =125W Avg.,f=225MHz,DVB--T DD DQ out OFDM SingleChannel. ACPRmeasuredin7.61MHz ChannelBandwidth 4MHzOffset. PowerGain G 24 25 27 dB ps Drain Efficiency 27 28.5 % D Adjacent ChannelPowerRatio ACPR --61 --59 dBc Input ReturnLoss IRL --18 --9 dB TypicalPerformance352.2MHz (InFreescale352.2MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W CW DD DQ out PowerGain G 22 dB ps Drain Efficiency 68 % D Input ReturnLoss IRL --15 dB TypicalPerformance88--108MHz (InFreescale88--108MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W DD DQ out CW PowerGain G 24.5 dB ps Drain Efficiency 74 % D Input ReturnLoss IRL --5 dB 1. Eachsideofdevicemeasuredseparately. 2. Measurementmadewithdevicein push--pullconfiguration. MRF6VP2600HR6 RF DeviceData FreescaleSemiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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