DocumentNumber:MRF6VP11KH FreescaleSemiconductor Rev. 8, 9/2012 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6VP11KHR6 Designedprimarily forpulsewidebandapplications withfrequencies upto MRF6VP11KGSR5 150MHz.Devicesareunmatchedandaresuitableforuseinindustrial, medical andscientific applications. Typical PulsePerformanceat 130MHz: V =50Volts,I = 150mA, DD DQ P = 1000Watts Peak (200W Avg.), PulseWidth= 100 sec, out 1.8--150MHz,1000W,50V Duty Cycle= 20% LATERALN--CHANNEL Power Gain 26dB BROADBAND Drain Efficiency 71% RFPOWERMOSFETs Capableof Handling10:1VSWR, 50Vdc, 130MHz, 1000Watts Peak Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CW OperationCapability withAdequateCooling QualifiedUptoaMaximum of 50V Operation DD CASE375D--05 IntegratedESD Protection STYLE1 Designedfor Push--Pull Operation NI--1230--4 MRF6VP11KHR6 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation InTapeandReel. R6Suffix = 150Units, 56mm TapeWidth, 13inchReel. R5Suffix = 50Units, 56mm TapeWidth, 13InchReel. CASE2282--02 NI--1230S--4GULL MRF6VP11KGSR5 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA Table1.MaximumRatings Rating Symbol Value Unit RF /V42 RF /V inB GSB outB DSB Drain--Source Voltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg (Top View) CaseOperatingTemperature T 150 C C Figure1.PinConnections (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.13 C/W JC CW: CaseTemperature67C,1000W CW,100MHz ThermalImpedance,JunctiontoCase Z 0.03 C/W JC Pulse:CaseTemperature80C,1000W Peak,100 sec PulseWidth,20%Duty Cycle 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2000V MachineModel(perEIA/JESD22--A115) A,passes 125V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =300mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1 1.63 3 Vdc GS(th) (V =10Vdc,I =1600 Adc) DS D (2) GateQuiescentVoltage V 1.5 2.2 3.5 Vdc GS(Q) (V =50Vdc,I =150mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 3.3 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 147 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 506 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (2,3) FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 130 DD DQ out MHz, 100 sec Pulse Width, 20% Duty Cycle PowerGain G 24 26 28 dB ps Drain Efficiency 69 71 % D Input ReturnLoss IRL --16 --9 dB 1. Eachsideofdevicemeasuredseparately. 2. Measurements madewithdevicein push--pullconfiguration. 3. Measurementsmadewithdeviceinstraightleadconfigurationbeforeanyleadformingoperationisapplied.Leadformingisusedforgull wing(GS)parts. MRF6VP11KHR6MRF6VP11KGSR5 RF DeviceData FreescaleSemiconductor, Inc. 2