TM HiPerRF V = 1000V IXFK21N100F DSS I = 21A Power MOSFETs IXFX21N100F D25 R 500m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g TO-264 (IXFK) Intrinsic R , High dV/dt, Low t g rr G D S Symbol Test Conditions Maximum Ratings Tab V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS PLUS247 (IXFX) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C21A D25 C I T = 25C, Pulse Width Limited by T 84 A DM C JM G I T = 25C21A A C D Tab S E T = 25C 2.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25C 500 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z T 1.6mm (0.062 in.) from Case for 10s 300 C RF Capable MOSFETs L T Plastic Body for 10s 260 C z SOLD Double Metal Process for Low Gate Resistive M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C z Fast Intrinsic Rectifier Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = 1mA 1000 V DC-DC Converters DSS GS D z Switch-Mode and Resonant-Mode V V = V , I = 4mA 3.0 5.5 V GS(th) DS GS D Power Supplies, >500kHz Switching z DC Choppers I V = 20V, V = 0V 200 nA GSS GS DS z 13.5 MHz Industrial Applications z I V = V , V = 0V 100 A Pulse Generation DSS DS DSS GS z T = 125C 2 mA Laser Drivers J z RF Amplifiers R V = 10V, I = 0.5 I , Note 1 500 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS98880A(05/10)IXFK21N100F IXFX21N100F Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 15 32 S fs DS D D25 C 5500 pF iss C V = 0V, V = 25V, f = 1MHz 640 pF oss GS DS C 190 pF rss t 21 ns d(on) Resistive Switching Times t 16 ns r V = 10V, V = 0.5 V , I = 0.5 I Terminals: 1 - Gate GS DS DSS D D25 2 - Drain t 55 ns d(off) 3 - Source R = 1 (External) G 4 - Drain t 15 ns f Millimeter Inches Dim. Min. Max. Min. Max. Q 160 nC g(on) A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q V = 10V, V = 0.5 V , I = 0.5 I 35 nC gs GS DS DSS D D25 A2 2.00 2.10 .079 .083 Q 77 nC b 1.12 1.42 .044 .056 gd b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 R 0.26 C/W thJC c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.15 C/W thCK E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 Source-Drain Diode Characteristic Values L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 T = 25C Unless Otherwise Specified) Min. Typ. Max. J Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 I V = 0V 21 A S GS R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 I Repetitive, Pulse Width Limited by T 84 A S 6.04 6.30 .238 .248 SM JM T 1.57 1.83 .062 .072 V I = I , V = 0V, Note 1 1.5 V SD F S GS TM PLUS247 Outline t 250 ns rr I = 25A, -di/dt = 100A/s F Q 1.4 C RM V = 100V, V = 0V R GS I 10 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537