Document Number: MMRF1310H Freescale Semiconductor Rev. 0, 7/2014 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs MMRF1310HR5 These high ruggedness devices are designed for use in high VSWR military, MMRF1310HSR5 industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz. Typical Performance: V =50Vdc,I = 100 mA DD DQ P f G IRL out 1.8--600 MHz, 300 W CW, 50 V ps D Signal Type (W) (MHz) (dB) (%) (dB) BROADBAND RF POWER MOSFETs Pulse (100 sec, 300 Peak 230 26.5 74.0 --16 20% Duty Cycle) CW 300 Avg. 130 25.0 80.0 --15 Capable of Handling a Load Mismatch of 65:1 VSWR 50 Vdc, 230 MHz, at all Phase Angles 300 W CW Output Power 300 W Pulse Peak Power, 20% Duty Cycle, 100 sec NI--780H--4L Capable of 300 W CW Operation MMRF1310HR5 Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 V Operation DD Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection NI--780S--4L Greater Negative Gate--Source Voltage Range for Improved Class C Operation MMRF1310HSR5 Characterized with Series Equivalent Large--Signal Impedance Parameters NI--780H--4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. NI--780S--4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel. GateA31 DrainA Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS GateB42 DrainB Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (Top View) Total Device Dissipation T =25 C P 1050 W C D Note: The backside of the package is the Derate above 25 C 5.26 W/ C source terminal for the transistors. (1,2) Operating Junction Temperature T 225 C J Figure 1. Pin Connections Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit (4) Thermal Resistance, Junction to Case C/W Pulse: Case Temperature 75C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, I = 100 mA, 230 MHz Z 0.05 DQ JC CW: Case Temperature 87 C, 300 W CW, 50 Vdc, I = 1100 mA, 230 MHz R 0.19 DQ JC 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (1) Off Characteristics Gate--Source Leakage Current I 1 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0 Vdc, I =50 mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 100 Vdc, V =0 Vdc) DS GS On Characteristics (1) Gate Threshold Voltage V 1.7 2.2 2.7 Vdc GS(th) (V =10 Vdc, I = 480 Adc) DS D Gate Quiescent Voltage V 2.0 2.5 3.0 Vdc GS(Q) (V =50 Vdc, I = 100 mAdc, Measured in Functional Test) DD D (1) Drain--Source On--Voltage V 0.25 Vdc DS(on) (V =10 Vdc, I =1 Adc) GS D (1) Dynamic Characteristics Reverse Transfer Capacitance C 0.8 pF rss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Output Capacitance C 76 pF oss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Input Capacitance C 188 pF iss (V =50 Vdc, V =0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V =50 Vdc, I = 100 mA, P = 300 W Peak (60 W Avg.), f = 230 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle Power Gain G 25.0 26.5 28.0 dB ps Drain Efficiency 72.0 74.0 % D Input Return Loss IRL --16 --9 dB Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V =50 Vdc, I = 100 mA DD DQ VSWR 65:1 at all Phase Angles No Degradation in Output Power Pulse: P = 300 W Peak (60 W Avg.), f = 230 MHz, out 100 sec Pulse Width, 20% Duty Cycle CW: P = 300 W Avg., f = 130 MHz out 1. Each side of device measured separately. MMRF1310HR5 MMRF1310HSR5 RF Device Data Freescale Semiconductor, Inc. 2