DocumentNumber:MMRF1316N FreescaleSemiconductor Rev. 0, 7/2014 Technical Data RFPowerLDMOSTransistor MMRF1316NR1 N--Channel Enhancement--ModeLateral MOSFET This high ruggedness device is designed foruse inhigh VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, 1.8600MHz,300WCW,50V between 1.8 and 600 MHz. WIDEBAND TypicalPerformance: V =50Vdc DD RFPOWERLDMOSTRANSISTOR P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1,3) 87.5--108 CW 361 23.8 80.1 (2) 230 CW 300 25.0 70.0 (2) 230 Pulse (100 sec,20% 300 Peak 27.0 71.0 Duty Cycle) LoadMismatch/Ruggedness TO--270WB--4 Frequency P Test PLASTIC in SignalType VSWR (MHz) (W) Voltage Result (1) 98 CW >65:1 3 50 NoDevice at allPhase (3 dB Degradation Angles Overdrive) (2) 230 Pulse 1.16 Peak (100 sec,20% (3 dB DrainA GateA32 Duty Cycle) Overdrive) 1. Measured in 87.5108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. GateB41 DrainB 3. The values shown are the minimum measured performance numbers across the indicated frequency range. Features (Top View) Wide Operating Frequency Range Note: Exposed backside of the package is ExtremeRuggedness thesourceterminalforthetransistors. Unmatched Input and Output Allowing Wide Frequency Range Utilization Figure1.PinConnections IntegratedStability Enhancements Low Thermal Resistance IntegratedESD ProtectionCircuitry In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. FreescaleSemiconductor, Inc., 2014. All rights reserved. MMRF1316NR1 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 909 W C D Derate above 25 C 4.55 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.22 C/W JC CW: Case Temperature 81 C, 305W CW, 50Vdc, I =100 mA, 230 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.034 C/W JC Pulse: Case Temperature 59C, 300 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) A,passes 150V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 140 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.8 2.3 2.8 Vdc GS(th) (V =10Vdc,I =960 Adc) DS D Gate Quiescent Voltage V 2.2 2.7 3.2 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =2Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at