X-On Electronics has gained recognition as a prominent supplier of MMRF1317HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1317HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1317HR5 NXP

MMRF1317HR5 electronic component of NXP
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Part No.MMRF1317HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors BL RF
Datasheet: MMRF1317HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1353.9149 ea
Line Total: USD 67695.74 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
   
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMRF1317HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1317HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MMRF1317H FreescaleSemiconductor Rev. 0, 3/2016 TechnicalData RFPowerLDMOSTransistors MMRF1317H HighRuggedness N--Channel MMRF1317HS Enhancement--ModeLateral MOSFETs These 1300 W RF power transistors are designed for applications operating at frequencies between 1020and 1100MHz. Thesedevices aresuitable for use indefenseandcommercialpulseapplications, such as IFF andsecondary 10301090MHz,1300WPEAK,50V surveillanceradars. RFPOWERLDMOSTRANSISTORS TypicalPerformance: In1030, 1090MHz referencecircuit, V =50Vdc, DD I =100mA DQ(A+B) P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1) 1030 Pulse 1300Peak 18.9 56.0 (128 sec,10%Duty Cycle) (1) 1090 1100Peak 18.8 57.9 NI--1230H--4S TypicalNarrowbandPerformance: V =50Vdc,I =100mA DD DQ(A+B) MMRF1317H P Frequency out G ps D SignalType (W) (MHz) (dB) (%) (2) 1030 Pulse 1300Peak 18.2 58.1 (128 sec,10%Duty Cycle) LoadMismatch/Ruggedness NI--1230S--4S MMRF1317HS Frequency Pin Test SignalType (MHz) VSWR (W) Voltage Result (2) 1030 Pulse >10:1 40 50 NoDevice (128 sec, 10% at allPhase (3 dB Degradation Duty Cycle) Angles Overdrive) GateA31 DrainA 1. Measuredin1030, 1090MHz referencecircuit. 2. Measuredin1030MHz narrowbandtest circuit. Features DrainB GateB42 Internally input and output matched for broadband operation and ease of use Devicecanbeusedsingle--ended, push--pull, or inaquadrature (Top View) configuration Note: The backside of the package is the Highruggedness, handles > 10:1VSWR sourceterminalforthetransistor. IntegratedESD protectionwith greater negativevoltagerangefor Figure1.PinConnections improvedClass C operationandgatevoltagepulsing Characterizedwithseries equivalent large--signal impedanceparameters Applications Ground--basedsecondary surveillanceradars IFF transponders FreescaleSemiconductor, Inc., 2016. All rights reserved. MMRF1317HMMRF1317HS RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+105 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 55to+150 C C (1) OperatingJunctionTemperatureRange T 55to+225 C J TotalDeviceDissipation T =25 C P 869 W C D Derateabove25 C 4.35 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase Z 0.019 C/W JC Pulse:CaseTemperature70C,1300W Peak,128 sec PulseWidth, 10%Duty Cycle,50Vdc,I =100mA,1030MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 105 Vdc (BR)DSS (V =0Vdc,I =10 Adc) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =105Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1.3 1.7 2.3 Vdc GS(th) (V =10Vdc,I =520 Adc) DS D (4) GateQuiescentVoltage V 1.5 2.0 2.5 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D(A+B) (3) Drain--SourceOn--Voltage V 0.1 0.3 0.5 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (3) DynamicCharacteristics ReverseTransferCapacitance C 2.43 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. Goto

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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