DocumentNumber:MMRF1317H FreescaleSemiconductor Rev. 0, 3/2016 TechnicalData RFPowerLDMOSTransistors MMRF1317H HighRuggedness N--Channel MMRF1317HS Enhancement--ModeLateral MOSFETs These 1300 W RF power transistors are designed for applications operating at frequencies between 1020and 1100MHz. Thesedevices aresuitable for use indefenseandcommercialpulseapplications, such as IFF andsecondary 10301090MHz,1300WPEAK,50V surveillanceradars. RFPOWERLDMOSTRANSISTORS TypicalPerformance: In1030, 1090MHz referencecircuit, V =50Vdc, DD I =100mA DQ(A+B) P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1) 1030 Pulse 1300Peak 18.9 56.0 (128 sec,10%Duty Cycle) (1) 1090 1100Peak 18.8 57.9 NI--1230H--4S TypicalNarrowbandPerformance: V =50Vdc,I =100mA DD DQ(A+B) MMRF1317H P Frequency out G ps D SignalType (W) (MHz) (dB) (%) (2) 1030 Pulse 1300Peak 18.2 58.1 (128 sec,10%Duty Cycle) LoadMismatch/Ruggedness NI--1230S--4S MMRF1317HS Frequency Pin Test SignalType (MHz) VSWR (W) Voltage Result (2) 1030 Pulse >10:1 40 50 NoDevice (128 sec, 10% at allPhase (3 dB Degradation Duty Cycle) Angles Overdrive) GateA31 DrainA 1. Measuredin1030, 1090MHz referencecircuit. 2. Measuredin1030MHz narrowbandtest circuit. Features DrainB GateB42 Internally input and output matched for broadband operation and ease of use Devicecanbeusedsingle--ended, push--pull, or inaquadrature (Top View) configuration Note: The backside of the package is the Highruggedness, handles > 10:1VSWR sourceterminalforthetransistor. IntegratedESD protectionwith greater negativevoltagerangefor Figure1.PinConnections improvedClass C operationandgatevoltagepulsing Characterizedwithseries equivalent large--signal impedanceparameters Applications Ground--basedsecondary surveillanceradars IFF transponders FreescaleSemiconductor, Inc., 2016. All rights reserved. MMRF1317HMMRF1317HS RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+105 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 55to+150 C C (1) OperatingJunctionTemperatureRange T 55to+225 C J TotalDeviceDissipation T =25 C P 869 W C D Derateabove25 C 4.35 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase Z 0.019 C/W JC Pulse:CaseTemperature70C,1300W Peak,128 sec PulseWidth, 10%Duty Cycle,50Vdc,I =100mA,1030MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 105 Vdc (BR)DSS (V =0Vdc,I =10 Adc) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =105Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1.3 1.7 2.3 Vdc GS(th) (V =10Vdc,I =520 Adc) DS D (4) GateQuiescentVoltage V 1.5 2.0 2.5 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D(A+B) (3) Drain--SourceOn--Voltage V 0.1 0.3 0.5 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (3) DynamicCharacteristics ReverseTransferCapacitance C 2.43 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. Goto