DocumentNumber:MMRF1318N FreescaleSemiconductor Rev. 0, 12/2014 TechnicalData RFPowerLDMOSTransistor Enhancement--ModeLateral MOSFET MMRF1318NR1 Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use inmilitaryandcommercialCWandpulseapplications,suchasradio communications and radar. TypicalPerformance: V =50Vdc,T =25 C DD A 10600MHz,300W,50V BROADBAND P Frequency G out ps D RFPOWERLDMOSTRANSISTOR SignalType (W) (MHz) (dB) (%) 450 CW 300 22 60 Capableof Handling10:1VSWR 50Vdc, 450MHz, 300W CW Output Power Features Characterizedwithseries equivalent large--signalimpedanceparameters Qualifiedfor operationat 50Vdc IntegratedESD protection Greater negativegate--sourcevoltagerangefor improvedClass C TO--270WB--4 PLASTIC operation InTapeandReel. R1Suffix = 500Units per 44mm, 13--inchReel. GateA 3 2 DrainA 1 GateB 4 DrainB (TopView) Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. Figure1.PinConnections FreescaleSemiconductor, Inc., 2014. All rights reserved. MMRF1318NR1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+110 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.24 C/W JC CaseTemperature83C,300W CW,50Vdc,I =900mA,450MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1950V MachineModel(perEIA/JESD22--A115) A,passes 150V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 120 Vdc (BR)DSS (V =0Vdc,I =150mAdc) GS D ZeroGateVoltageDrainLeakageCurrent I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.65 2.4 Vdc GS(th) (V =10Vdc,I =800 Adc) DS D GateQuiescentVoltage V 1.9 2.7 3.4 Vdc GS(Q) (V =50Vdc,I =900mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =2Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat