X-On Electronics has gained recognition as a prominent supplier of MMRF1318NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1318NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1318NR1 NXP

MMRF1318NR1 electronic component of NXP
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Part No.MMRF1318NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors BL RF
Datasheet: MMRF1318NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 182.6662 ea
Line Total: USD 91333.1 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
   
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We are delighted to provide the MMRF1318NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1318NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MMRF1318N FreescaleSemiconductor Rev. 0, 12/2014 TechnicalData RFPowerLDMOSTransistor Enhancement--ModeLateral MOSFET MMRF1318NR1 Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use inmilitaryandcommercialCWandpulseapplications,suchasradio communications and radar. TypicalPerformance: V =50Vdc,T =25 C DD A 10600MHz,300W,50V BROADBAND P Frequency G out ps D RFPOWERLDMOSTRANSISTOR SignalType (W) (MHz) (dB) (%) 450 CW 300 22 60 Capableof Handling10:1VSWR 50Vdc, 450MHz, 300W CW Output Power Features Characterizedwithseries equivalent large--signalimpedanceparameters Qualifiedfor operationat 50Vdc IntegratedESD protection Greater negativegate--sourcevoltagerangefor improvedClass C TO--270WB--4 PLASTIC operation InTapeandReel. R1Suffix = 500Units per 44mm, 13--inchReel. GateA 3 2 DrainA 1 GateB 4 DrainB (TopView) Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. Figure1.PinConnections FreescaleSemiconductor, Inc., 2014. All rights reserved. MMRF1318NR1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+110 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.24 C/W JC CaseTemperature83C,300W CW,50Vdc,I =900mA,450MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1950V MachineModel(perEIA/JESD22--A115) A,passes 150V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 120 Vdc (BR)DSS (V =0Vdc,I =150mAdc) GS D ZeroGateVoltageDrainLeakageCurrent I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.65 2.4 Vdc GS(th) (V =10Vdc,I =800 Adc) DS D GateQuiescentVoltage V 1.9 2.7 3.4 Vdc GS(Q) (V =50Vdc,I =900mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =2Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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