DocumentNumber:MMRF1306H FreescaleSemiconductor Rev. 1, 8/2014 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel MMRF1306HR5 Enhancement--ModeLateral MOSFETs MMRF1306HSR5 ThesehighruggednessdevicesaredesignedforuseinhighVSWRCWor pulseapplications,suchasHF,VHF,andlow--bandUHFradarandhighpower radio communications. They are unmatched input and output designs allowing widefrequency utilizationfrom1.8to600MHz. 1.8600MHz,1250WCW,50V Typical Performance: V =50Vdc,I = 100mA DD DQ WIDEBAND P f G out RFPOWERLDMOSTRANSISTORS ps D SignalType (W) (MHz) (dB) (%) Pulse 1250Peak 230 24.0 74.0 (100 sec,20%Duty Cycle) CW 1250CW 230 22.9 74.6 (1) ApplicationCircuits TypicalPerformance Frequency P G out ps D NI--1230H--4S (MHz) SignalType (W) (dB) (%) MMRF1306HR5 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 NI--1230S--4S 352 Pulse 1250 21.5 66 MMRF1306HSR5 (200 sec, 20%Duty Cycle) 352 CW 1150 20.5 68 500 CW 1000 18 58 1. Contact yourlocalFreescalesales office foradditionalinformation on specific circuit designs. LoadMismatch/Ruggedness GateA31 DrainA Frequency P Test out SignalType VSWR (MHz) (W) Voltage Result GateB DrainB 42 230 Pulse >65:1 at all 1500Peak 50 NoDevice (100 sec,20% PhaseAngles (3 dB Degradation Duty Cycle) Overdrive) (Top View) Features UnmatchedInput andOutput AllowingWideFrequency RangeUtilization Note: The backside of the package is the DevicecanbeusedSingle--Endedor inaPush--Pull Configuration sourceterminalforthetransistors. QualifiedUptoaMaximum of 50V Operation DD Figure1.PinConnections Characterizedfrom 30V to50V for ExtendedPower Range Suitablefor Linear ApplicationwithAppropriateBiasing IntegratedESD ProtectionwithGreater NegativeGate--SourceVoltageRange for ImprovedClass C Operation CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. FreescaleSemiconductor, Inc., 20132014. All rights reserved. MMRF1306HR5MMRF1306HSR5 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+133 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C TotalDeviceDissipation T =25 C P 1333 W C D Derateabove25 C 6.67 W/ C (1) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.15 C/W JC CW: CaseTemperature63 C, 1250W CW, I =100mA,230MHz DQ ThermalImpedance,JunctiontoCase Z 0.027 C/W JC Pulse: CaseTemperature66C, 1250W Pulse, 100 sec PulseWidth,20%Duty Cycle, I =100mA,230MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 3500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 4000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 133 Vdc (BR)DSS (V =0Vdc,I =100mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =1776 Adc) DS D GateQuiescentVoltage V 1.9 2.2 2.9 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2Adc) GS D ForwardTransconductance g 28.0 S fs (V =10Vdc,I =30Adc) DS D (3) DynamicCharacteristics ReverseTransferCapacitance C 2.8 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 185 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 562 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. Goto