X-On Electronics has gained recognition as a prominent supplier of MMRF1306HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1306HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1306HR5 NXP

MMRF1306HR5 electronic component of NXP
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Part No.MMRF1306HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors MOSFET 10-500 MHz 1000 W 50 V
Datasheet: MMRF1306HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 253.4177 ea
Line Total: USD 506.84 
Availability - 0
MOQ: 2  Multiples: 2
Pack Size: 2
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 2
Multiples : 2
2 : USD 253.4177

   
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We are delighted to provide the MMRF1306HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1306HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MMRF1306H FreescaleSemiconductor Rev. 1, 8/2014 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel MMRF1306HR5 Enhancement--ModeLateral MOSFETs MMRF1306HSR5 ThesehighruggednessdevicesaredesignedforuseinhighVSWRCWor pulseapplications,suchasHF,VHF,andlow--bandUHFradarandhighpower radio communications. They are unmatched input and output designs allowing widefrequency utilizationfrom1.8to600MHz. 1.8600MHz,1250WCW,50V Typical Performance: V =50Vdc,I = 100mA DD DQ WIDEBAND P f G out RFPOWERLDMOSTRANSISTORS ps D SignalType (W) (MHz) (dB) (%) Pulse 1250Peak 230 24.0 74.0 (100 sec,20%Duty Cycle) CW 1250CW 230 22.9 74.6 (1) ApplicationCircuits TypicalPerformance Frequency P G out ps D NI--1230H--4S (MHz) SignalType (W) (dB) (%) MMRF1306HR5 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 NI--1230S--4S 352 Pulse 1250 21.5 66 MMRF1306HSR5 (200 sec, 20%Duty Cycle) 352 CW 1150 20.5 68 500 CW 1000 18 58 1. Contact yourlocalFreescalesales office foradditionalinformation on specific circuit designs. LoadMismatch/Ruggedness GateA31 DrainA Frequency P Test out SignalType VSWR (MHz) (W) Voltage Result GateB DrainB 42 230 Pulse >65:1 at all 1500Peak 50 NoDevice (100 sec,20% PhaseAngles (3 dB Degradation Duty Cycle) Overdrive) (Top View) Features UnmatchedInput andOutput AllowingWideFrequency RangeUtilization Note: The backside of the package is the DevicecanbeusedSingle--Endedor inaPush--Pull Configuration sourceterminalforthetransistors. QualifiedUptoaMaximum of 50V Operation DD Figure1.PinConnections Characterizedfrom 30V to50V for ExtendedPower Range Suitablefor Linear ApplicationwithAppropriateBiasing IntegratedESD ProtectionwithGreater NegativeGate--SourceVoltageRange for ImprovedClass C Operation CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. FreescaleSemiconductor, Inc., 20132014. All rights reserved. MMRF1306HR5MMRF1306HSR5 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+133 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C TotalDeviceDissipation T =25 C P 1333 W C D Derateabove25 C 6.67 W/ C (1) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.15 C/W JC CW: CaseTemperature63 C, 1250W CW, I =100mA,230MHz DQ ThermalImpedance,JunctiontoCase Z 0.027 C/W JC Pulse: CaseTemperature66C, 1250W Pulse, 100 sec PulseWidth,20%Duty Cycle, I =100mA,230MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 3500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 4000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 133 Vdc (BR)DSS (V =0Vdc,I =100mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =1776 Adc) DS D GateQuiescentVoltage V 1.9 2.2 2.9 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2Adc) GS D ForwardTransconductance g 28.0 S fs (V =10Vdc,I =30Adc) DS D (3) DynamicCharacteristics ReverseTransferCapacitance C 2.8 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 185 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 562 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. Goto

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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