DocumentNumber:MMRF1312H FreescaleSemiconductor Rev. 0, 3/2016 Technical Data RFPowerLDMOSTransistors MMRF1312H HighRuggedness N--Channel MMRF1312HS Enhancement--ModeLateral MOSFETs MMRF1312GS TheseRFpowerdevicesaredesignedforpulseapplicationsoperatingat frequenciesfrom900to1215MHz.Thedevicesaresuitableforuseinpulse applications with large duty cycles and long pulses and are ideal for use in high 9001215MHz,1000WPEAK,52V powermilitaryandcommercialL--Bandradarapplications suchas IFFand AIRFASTRFPOWERLDMOS DME/TACAN. TRANSISTORS TypicalShortPulsePerformance: In 9001215 MHz reference circuit, V =52Vdc,I =100mA DD DQ(A+B) Frequency P G NI--1230H--4S out ps D (MHz) SignalType (W) (dB) (%) MMRF1312H 900 Pulse 1615 Peak 15.2 54.0 (128 sec,10%Duty Cycle) 960 1560 Peak 17.3 55.7 1030 1500 Peak 17.8 53.8 NI--1230S--4S MMRF1312HS 1090 1530 Peak 18.0 54.5 1215 1200 Peak 19.2 58.5 LoadMismatch/Ruggedness Frequency P Test in NI--1230GS--4L SignalType VSWR (MHz) (W) Voltage Result MMRF1312GS (1) 1030 Pulse >20:1 at all 20.2 Peak 52 NoDevice (128 sec,10% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Measured in 1030 MHz narrowband reference circuit. Features GateA31 DrainA Internally input and output matched for broadband operation and ease of use Device can be used in a single--ended, push--pull or quadrature configuration Qualified up to a maximum of 52 V operation DD DrainB GateB42 High ruggedness, handles > 20:1 VSWR IntegratedESD protectionwithgreater negative voltage range for improved Class C operation and gate voltage pulsing (Top View) Characterized with series equivalent large--signal impedance parameters Note: The backside of the package is the source terminalforthe transistor. TypicalApplications Figure1.PinConnections Air traffic control systems (ATC), including ground--based secondary radars such as IFF interrogators or transponders Distance measuring equipment (DME) Tactical air navigation (TACAN) FreescaleSemiconductor, Inc., 2016. All rights reserved. MMRF1312HMMRF1312HSMMRF1312GS RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +112 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to 150 C C (1) Operating Junction Temperature Range T 40 to 225 C J TotalDevice Dissipation T =25 C P 1053 W C D Derate above 25 C 5.26 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalImpedance, Junction to Case Z C/W JC Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width, 10%Duty Cycle, 50 Vdc, I =100 mA, 1030 MHz 0.017 DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 112 Vdc (BR)DSS (V =0Vdc,I =10 A) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =112Vdc,V =0Vdc) DS GS OnCharacteristics (3) Gate Threshold Voltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =520 Adc) DS D (4) Gate Quiescent Voltage V 1.5 2.0 2.5 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (3) Drain--Source On--Voltage V 0.05 0.17 0.35 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (3) DynamicCharacteristics Reverse TransferCapacitance C 2.5 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Goto