DocumentNumber:MMRF1314H NXPSemiconductors Rev. 1, 1/2017 TechnicalData MMRF1314H RFPowerLDMOSTransistors HighRuggedness N--Channel MMRF1314HS Enhancement--ModeLateral MOSFETs MMRF1314GS TheseRFpowerdevicesaredesignedforpulseapplicationsoperatingat frequenciesfrom1200to1400MHz.Thedevicesaresuitableforuseinpulse applications andareidealfor usein highpower military and commercialL--Band 12001400MHz,1000WPEAK,52V radarapplications. AIRFASTRFPOWERLDMOS TRANSISTORS TypicalPerformance: In 12001400 MHz reference circuit, V =52Vdc, DD I =100mA DQ(A+B) Frequency P G out ps D SignalType (MHz) (W) (dB) (%) 1200 Pulse 1130Peak 15.5 47.5 NI--1230H--4S (128 sec,10%Duty Cycle) MMRF1314H 1300 1170Peak 17.2 47.0 1400 1000Peak 17.0 46.5 LoadMismatch/Ruggedness NI--1230S--4S Frequency P Test in MMRF1314HS SignalType VSWR (MHz) (W) Voltage Result (1) 1400 Pulse >20:1at 31.6Peak 52 No Device (128 sec, AllPhase (3dB Degradation 10% Duty Cycle) Angles Overdrive) 1. Measuredin1400MHz productiontestfixture. NI--1230GS--4L MMRF1314GS Features Internally input and output matched for broadband operation and ease of use Device can be used in a single--ended, push--pull or quadrature configuration Qualifieduptoamaximum of 52V operation DD Highruggedness, handles > 20:1VSWR GateA31 DrainA IntegratedESD protectionwithgreater negativegate--sourcevoltagerange for improvedClass C operationandgatevoltagepulsing Characterizedwithseries equivalent large--signalimpedanceparameters 42 DrainB GateB TypicalApplications Military and commercial L--Band radar systems (TopView) Note: Thebacksideofthepackageis the sourceterminalforthetransistor. Figure1.PinConnections 2017NXPB.V. MMRF1314HMMRF1314HSMMRF1314GS RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+105 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1) OperatingJunctionTemperatureRange T 40to+225 C J TotalDeviceDissipation T =25 C P 909 W C D Derateabove25 C 4.55 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase Z 0.018 C/W JC CaseTemperature60C,1000W Peak,128 sec PulseWidth, 10%Duty Cycle,50Vdc,I =100mA,1400MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 105 Vdc (BR)DSS (V =0Vdc,I =10 Adc) GS D ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =105Vdc,V =0Vdc) DS GS OnCharacteristics (4) GateThresholdVoltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =520 Adc) DS D (5) GateQuiescentVoltage V 1.6 2.1 2.6 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD DQ(A+B) (4) Drain--SourceOn--Voltage V 0.05 0.16 0.35 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (4) DynamicCharacteristics ReverseTransferCapacitance C 2.98 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat