DocumentNumber:MMRF1305H FreescaleSemiconductor Rev. 0, 12/2013 Technical Data RFPowerLDMOSTransistors HighRuggedness N--Channel MMRF1305HR5 Enhancement--ModeLateral MOSFETs MMRF1305HSR5 RFpowertransistors suitableforbothnarrowbandandbroadbandCWor pulseapplicationsoperatingatfrequenciesfrom1.8to2000 MHz,suchas military and radio communications and radar. These devices are fabricated usingFreescalesenhancedruggednessplatformandaresuitableforusein 1.8--2000MHz,100W,50V applications wherehighVSWRs areencountered. BROADBAND TypicalPerformance: V =50Vdc RFPOWERLDMOSTRANSISTORS DD P Frequency G IMD out ps D SignalType (W) (MHz) (dB) (%) (dBc) (1,3) 30--512 Two--Tone 100PEP 19.0 30.0 --30 (100 kHz spacing) (2) 512 CW 100 27.2 70.0 (2) 512 Pulse (200 sec,20% 100 Peak 26.0 70.0 NI--780H--4L Duty Cycle) MMRF1305HR5 LoadMismatch/Ruggedness Frequency P Test out SignalType VSWR (MHz) (W) Voltage Result (2) 512 Pulse >65:1 130 50 NoDevice (100 sec,20% at allPhase (3 dB Degradation NI--780S--4L Duty Cycle) Angles Overdrive) MMRF1305HSR5 (2) 512 CW 126 (3 dB Overdrive) 1. Measured in 30--512 MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the GateA DrainA indicated frequency range. Features Wide Operating Frequency Range GateB DrainB Extremely Rugged Unmatched, Capable of Very Broadband Operation IntegratedStability Enhancements (Top View) Low Thermal Resistance Note: The backside of the package is the IntegratedESD ProtectionCircuitry source terminalforthe transistors. In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T --40 to +150 C C (4) Operating Junction Temperature T --40 to +225 C J 4. Continuous use at maximum temperature willaffect MTTF. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1305HR5MMRF1305HSR5 RF DeviceData Freescale Semiconductor, Inc. 1Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.38 C/W JC CW: Case Temperature 81 C, 100W CW, 50Vdc, I =100 mA, 512 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.12 C/W JC Pulse: Case Temperature 73C, 100 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 512 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (2) OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 141 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 3 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (2) Gate Threshold Voltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =170 Adc) DS D Gate Quiescent Voltage V 2.1 2.6 3.1 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (2) Drain--Source On--Voltage V 0.23 Vdc DS(on) (V =10Vdc,I =1Adc) GS D (2) DynamicCharacteristics Reverse TransferCapacitance C 0.24 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 23.9 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 73.6 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I = 100 mA, P = 100 W Peak (20 W Avg.), f = 512 MHz, DD DQ(A+B) out 200 sec Pulse Width, 20% Duty Cycle PowerGain G 25.0 26.0 27.0 dB ps Drain Efficiency 68.0 70.0 % D Input Return Loss IRL --14 --9 dB LoadMismatch/Ruggedness(InFreescaleTestFixture,50ohm system,I =100mA) DQ(A+B) Frequency Signal P out (MHz) Type VSWR (W) TestVoltage,V Result DD 512 Pulse >65:1 130 Peak 50 No Device Degradation (100 sec,20%Duty Cycle) at allPhase Angles (3 dB Overdrive) CW 126 (3 dB Overdrive) 1. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to