DocumentNumber:MMRF1009H FreescaleSemiconductor Rev. 0, 1/2014 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MMRF1009HR5 RF power transistors designed for applications operating at frequencies MMRF1009HSR5 from900to1215MHz.Thesedevicesaresuitableforuseindefenseand commercialpulseapplications, suchas IFF andDME. TypicalPulsePerformance: V =50Vdc,I = 200mA, DD DQ PulseWidth= 128 sec, Duty Cycle= 10% P f G 960--1215MHz,500W,50V out ps D Application (W) (MHz) (dB) (%) PULSE LATERALN--CHANNEL Narrowband 500Peak 1030 19.7 62.0 RFPOWERMOSFETs Broadband 500Peak 960--1215 18.5 57.0 Capableof Handling10:1VSWR, 50Vdc, 1030MHz, 500W Peak Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection NI--780H--2L Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MMRF1009HR5 Operation InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. NI--780S--2L MMRF1009HSR5 Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase CaseTemperature80C,500W Pulse,128 sec PulseWidth,10%Duty Cycle Z 0.044 C/W JC 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2600V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =200mA) GS D ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 200 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.7 2.4 Vdc GS(th) (V =10Vdc,I =1.32mA) DS D GateQuiescentVoltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50Vdc,I =200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =3.26Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 0.2 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 697 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 1391 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleNarrowbandTestFixture,50ohm system)V =50Vdc,I =200mA,P =500W Peak (50W Avg.), DD DQ out f=1030MHz,128 sec PulseWidth,10%Duty Cycle PowerGain G 18.5 19.7 22.0 dB ps DrainEfficiency 58.0 62.0 % D InputReturnLoss IRL --18 --9 dB TypicalBroadbandPerformance960--1215MHz (InFreescale960--1215MHz TestFixture,50ohm system)V =50Vdc, DD I =200mA,P =500W Peak (50W Avg.),f=960--1215MHz,128 sec PulseWidth,10%Duty Cycle DQ out PowerGain G 18.5 dB ps DrainEfficiency 57.0 % D 1. Partinternally matchedbothoninputandoutput. MMRF1009HR5MMRF1009HSR5 RF DeviceData FreescaleSemiconductor, Inc. 2