DocumentNumber:MMRF1014N FreescaleSemiconductor Rev. 0, 7/2014 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET DesignedforClassAorClassABpoweramplifierapplicationswith MMRF1014NT1 frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. TypicalTwo--TonePerformance 1960MHz, 28Vdc, I =50mA, DQ P = 4W PEP out 1--2000MHz,4W,28V Power Gain 18dB CLASSA/AB DrainEfficiency 33% RFPOWERMOSFET IMD --34dBc TypicalTwo--TonePerformance 900MHz, 28Vdc, I =50mA, DQ P = 4W PEP out Power Gain 19dB DrainEfficiency 33% IMD --39dBc Capableof Handling5:1VSWR 28Vdc, 1960MHz, 4W CW Output Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters PLD--1.5 PLASTIC On--ChipRF Feedback for BroadbandStability IntegratedESD Protection InTapeandReel. T1Suffix = 1,000Units,16mm TapeWidth, 7--inchReel. Gate Drain Note: Thecenterpadonthebacksideof thepackageis thesourceterminal forthetransistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+68 Vdc DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg OperatingJunctionTemperature T 150 C J Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature76C,4W PEP,Two--Tone 8.8 CaseTemperature79C,4W CW 8.5 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV 1. MTTFcalculatoravailableatTable4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =50mAdc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =50mAdc) DS D (1) FixtureGateQuiescentVoltage V 2.2 3 4.2 Vdc GG(Q) (V =28Vdc,I =50mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.27 0.37 Vdc DS(on) (V =10Vdc,I =50mAdc) GS D DynamicCharacteristics ReverseTransferCapacitance C 21 pF rss (V =28Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 25 pF oss (V =28Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 30 pF iss (V =28Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohmsystem)V =28Vdc,I =50mA,P = 4W PEP,f1=1960MHz, DD DQ out f2=1960.1MHz,Two--ToneTest PowerGain G 16.5 18 20 dB ps DrainEfficiency 28 33 % D IntermodulationDistortion IMD --34 --28 dBc InputReturnLoss IRL --12 --10 dB TypicalPerformance(InFreescale900MHz DemoBoard,50ohmsystem)V =28Vdc,I =50mA,P = 4W PEP, DD DQ out f=900MHz,Two--ToneTest,100kHz ToneSpacing PowerGain G 19 dB ps DrainEfficiency 33 % D IntermodulationDistortion IMD --39 dBc InputReturnLoss IRL --12 dB 11 1. V = / xV .ParametermeasuredonFreescaleTestFixture,duetoresistivedividernetwork ontheboard. GG 10 GS(Q) RefertoTestCircuitSchematic. MMRF1014NT1 RF DeviceData FreescaleSemiconductor, Inc. 2