DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 1000 V DSS High dv/dt Nanosecond Switching I = 2 A D25 Symbol Test Conditions Maximum Ratings R = 7.8 DS(on) T = 25C to 150C P = 200W J V 1000 V DC DSS T = 25C to 150C R = 1 M J GS 1000 V V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 2 A D25 T = 25C, pulse width limited by T c JM I 12 A DM T = 25C c I 1.5 A AR T = 25C c 6 mJ E AR I I , di/dt 100A/s, V V , S DM DD DSS 3 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN P 200 W DC GATE T = 25C c P 105 W DHS Derate .7W/C above 25C T = 25C c P 3.5 W DAMB R 0.71 C/W thJC SG1 SG2 SD1 SD2 R 1.41 C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate T = 25C unless otherwise specified J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 3 ma GS D 1000 V V DSS cycling capability IXYS advanced low Q process V = V , I = 4 ma g DS GS D 2.5 4.5 V V GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive faster switching V = 0.8 V T = 25C DS DSS J I 50 A DSS V = 0 T = 125C GS J Low R 500 DS(on) A Very low insertion inductance (<2nH) V = 15 V, I = 0.5I GS D D25 R 7.8 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 0.8 2 S fs Advantages -55 +175 C Optimized for RF and high speed T J switching at frequencies to 30MHz T 175 C JM Easy to mountno insulators needed High power density T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s 300 C T L Weight 2 g DE150-102N02A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 5 G C 500 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 150 pF oss f = 1 MHz C 3 pF rss Back Metal to any Pin 16 pF C Stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM R = 0.2 (External) 4 ns T G d(off) T 4 ns off 23 nC Q g(on) V = 10 V, V = 0.5 V GS DS DSS Q 4.5 nC gs I = 0.5 I D D25 Q 14 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 1.5 A S Repetitive pulse width limited by T JM I 12 A SM I = I , V = 0 V, F S GS 1.8 V V SD Pulse test, t 300 s, duty cycle 2% T 710 ns rr For detailed device mounting and installation instructions, see the DE- Series MOSFET Mounting Instructions technical note on IXYS RFs web site at www.ixysrf.com/Technical Support/App notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045