Document Number: MMRF1308H
Freescale Semiconductor
Rev. 0, 7/2014
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1308HR5
These high ruggedness devices are designed for use in high VSWR military,
MMRF1308HSR5
aerospace and defense, industrial (including laser and plasma exciters),
broadcast (analog and digital), and radio/land mobile applications. They are
unmatched input and output designs allowing wide frequency range utilization,
between 1.8 and 600 MHz.
1.8--600 MHz, 600 W CW, 50 V
Typical Performance: V =50Vdc,I = 100 mA BROADBAND
DD DQ
RF POWER MOSFETs
P
f G IRL
out
ps D
Signal Type (W)
(MHz) (dB) (%) (dB)
Pulse (100 sec, 600 Peak 230 25.0 74.6 --18
20% Duty Cycle)
CW 600 Avg. 230 24.6 75.2 --17
Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc,
NI--1230H--4S
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
MMRF1308HR5
600 W Pulse Peak Power, 20% Duty Cycle, 100 sec
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 V Operation
DD
Characterized from 30 V to 50 V for Extended Power Range
NI--1230S--4S
MMRF1308HSR5
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
PARTS ARE PUSH--PULL
Characterized with Series Equivalent Large--Signal Impedance Parameters
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
GateA31 DrainA
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +133 Vdc
DSS
GateB42 DrainB
Gate--Source Voltage V --6.0, +10 Vdc
GS
Storage Temperature Range T -- 65 to +150 C
stg
(Top View)
Case Operating Temperature T 150 C
C
Note: The backside of the package is the
Total Device Dissipation @ T =25 C P 1667 W
C D
source terminal for the transistors.
Derate above 25 C 8.33 W/ C
(1,2) Figure 1. Pin Connections
Operating Junction Temperature T 225 C
J
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case C/W
Case Temperature 68C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Z 0.022
JC
Case Temperature 60C, 600 W CW, 100 mA, 230 MHz R 0.12
JC
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T =25 C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(1)
Off Characteristics
Gate--Source Leakage Current I 1 Adc
GSS
(V =5 Vdc, V =0 Vdc)
GS DS
Drain--Source Breakdown Voltage V 133 Vdc
(BR)DSS
(V =0 Vdc, I = 100 mA)
GS D
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =50 Vdc, V =0 Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 20 Adc
DSS
(V = 100 Vdc, V =0 Vdc)
DS GS
On Characteristics
(1)
Gate Threshold Voltage V 1.7 2.2 2.7 Vdc
GS(th)
(V =10 Vdc, I = 960 Adc)
DS D
Gate Quiescent Voltage V 2.0 2.5 3.0 Vdc
GS(Q)
(V =50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD D
(1)
Drain--Source On--Voltage V 0.26 Vdc
DS(on)
(V =10 Vdc, I =2 Adc)
GS D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance C 1.60 pF
rss
(V =50 Vdc 30 mV(rms)ac @ 1 MHz, V =0 Vdc)
DS GS
Output Capacitance C 129 pF
oss
(V =50 Vdc 30 mV(rms)ac @ 1 MHz, V =0 Vdc)
DS GS
Input Capacitance C 342 pF
iss
(V =50 Vdc, V =0 Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V =50 Vdc, I = 100 mA, P = 600 W Peak (120 W Avg.), f = 230 MHz,
DD DQ out
100 sec Pulse Width, 20% Duty Cycle
Power Gain G 23.5 25.0 26.5 dB
ps
Drain Efficiency 73.5 74.6 %
D
Input Return Loss IRL --18 --12 dB
1. Each side of device measured separately.
MMRF1308HR5 MMRF1308HSR5
RF Device Data
Freescale Semiconductor, Inc.
2