X-On Electronics has gained recognition as a prominent supplier of MMRF1308HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1308HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1308HR5 NXP

MMRF1308HR5 electronic component of NXP
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Part No.MMRF1308HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Datasheet: MMRF1308HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 231.2461 ea
Line Total: USD 11562.3 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 50
Multiples : 50
50 : USD 279.6315

   
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We are delighted to provide the MMRF1308HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1308HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: MMRF1308H Freescale Semiconductor Rev. 0, 7/2014 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs MMRF1308HR5 These high ruggedness devices are designed for use in high VSWR military, MMRF1308HSR5 aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. 1.8--600 MHz, 600 W CW, 50 V Typical Performance: V =50Vdc,I = 100 mA BROADBAND DD DQ RF POWER MOSFETs P f G IRL out ps D Signal Type (W) (MHz) (dB) (%) (dB) Pulse (100 sec, 600 Peak 230 25.0 74.6 --18 20% Duty Cycle) CW 600 Avg. 230 24.6 75.2 --17 Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, NI--1230H--4S 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness MMRF1308HR5 600 W Pulse Peak Power, 20% Duty Cycle, 100 sec Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 V Operation DD Characterized from 30 V to 50 V for Extended Power Range NI--1230S--4S MMRF1308HSR5 Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation PARTS ARE PUSH--PULL Characterized with Series Equivalent Large--Signal Impedance Parameters In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. GateA31 DrainA Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS GateB42 DrainB Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T -- 65 to +150 C stg (Top View) Case Operating Temperature T 150 C C Note: The backside of the package is the Total Device Dissipation @ T =25 C P 1667 W C D source terminal for the transistors. Derate above 25 C 8.33 W/ C (1,2) Figure 1. Pin Connections Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case C/W Case Temperature 68C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Z 0.022 JC Case Temperature 60C, 600 W CW, 100 mA, 230 MHz R 0.12 JC 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (1) Off Characteristics Gate--Source Leakage Current I 1 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0 Vdc, I = 100 mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V = 100 Vdc, V =0 Vdc) DS GS On Characteristics (1) Gate Threshold Voltage V 1.7 2.2 2.7 Vdc GS(th) (V =10 Vdc, I = 960 Adc) DS D Gate Quiescent Voltage V 2.0 2.5 3.0 Vdc GS(Q) (V =50 Vdc, I = 100 mAdc, Measured in Functional Test) DD D (1) Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10 Vdc, I =2 Adc) GS D (1) Dynamic Characteristics Reverse Transfer Capacitance C 1.60 pF rss (V =50 Vdc 30 mV(rms)ac @ 1 MHz, V =0 Vdc) DS GS Output Capacitance C 129 pF oss (V =50 Vdc 30 mV(rms)ac @ 1 MHz, V =0 Vdc) DS GS Input Capacitance C 342 pF iss (V =50 Vdc, V =0 Vdc 30 mV(rms)ac @ 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V =50 Vdc, I = 100 mA, P = 600 W Peak (120 W Avg.), f = 230 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle Power Gain G 23.5 25.0 26.5 dB ps Drain Efficiency 73.5 74.6 % D Input Return Loss IRL --18 --12 dB 1. Each side of device measured separately. MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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