X-On Electronics has gained recognition as a prominent supplier of PD20010-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD20010-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD20010-E STMicroelectronics

Name: PD20010-E
Brand: STMicroelectronics
SKU: PD20010E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD20010-E electronic component of STMicroelectronics

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Part No.	PD20010-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	STMicroelectronics RF MOSFET Transistors POWER R.F.
Datasheet:	PD20010-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PD20010-E More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 400 Multiples : 1	400 : USD 12.8036 500 : USD 11.7175	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 12.8999 10 : USD 11.7421 25 : USD 11.2608 100 : USD 10.5087 250 : USD 10.1778 500 : USD 9.7867 1000 : USD 9.2754 5000 : USD 8.9044	N/A Obsolete

0 MOQ : 6 Multiples : 6	6 : USD 12.1591	N/A Obsolete

We are delighted to provide the PD20010-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD20010-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 10 W with 11 dB gain 2 GHz / 13.6 V OUT Plastic package ESD protection PowerSO-10RF (formed lead) In compliance with the 2002/95/EC European directive Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. PD20010-Es superior linearity performance Source makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC Drain approved, high power SMD package. It has been Gate specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Packages Packing PD20010-E PowerSO-10RF (formed lead) Tube PD20010S-E PowerSO-10RF (straight lead) Tube PD20010TR-E PowerSO-10RF (formed lead) Tape and reel PD20010STR-E PowerSO-10RF (straight lead) Tape and reel May 2012 Doc ID 15514 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents PD20010-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Typical performance . 5 4 Package mechanical data . 6 5 Revision history . 11 2/13 Doc ID 15514 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 5 A 5 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 2 GHz 2 GHz
Gain 11 Db 11 Db
Output Power 10 W 10 W
Configuration Single Single
Pd - Power Dissipation 59 W 59 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Vgs - Gate-Source Voltage 15 V 15 V
Series Pd20010 - E Pd20010 - E
Type Rf Power Mosfet Rf Power Mosfet
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 400 400
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Width 9.4 mm 9.4 mm
Channel Mode Enhancement Enhancement
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type Rf Mosfet Transistors Rf Mosfet Transistors
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000