DocumentNumber:MMRF1005H FreescaleSemiconductor Rev. 1, 4/2015 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MMRF1005HR5 RF power transistors designed for CW and pulse applications operating at MMRF1005HSR5 1300 MHz. These devices are suitable for use in defense and commercial CW andpulseapplications, suchas DME/IFF systems. Typical Pulse Performance: V =50Vdc,I = 100 mA DD DQ P f G IRL out ps D 1300MHz,250W,50V SignalType (W) (MHz) (dB) (%) (dB) LATERALN--CHANNEL RFPOWERMOSFETs Pulse (200 sec, 250 Peak 1300 22.7 57.0 --18 10%Duty Cycle) Typical CW Performance: V =50Vdc,I =10mA,T =61C DD DQ C P f G IRL out ps D SignalType (W) (MHz) (dB) (%) (dB) CW 230 CW 1300 20.0 53.0 --25 NI--780H--2L Capable of Handling a Load Mismatch of 10:1 VSWR, 50 Vdc, 1300 MHz MMRF1005HR5 at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec Features Characterized with series equivalent large--signal impedance parameters Internally matchedfor easeof use Qualified up to a maximum of 50 V operation DD Characterized from 20 to 50 V for extended power range Integrated ESD protection NI--780S--2L Greater negative gate--source voltage range for improved Class C MMRF1005HSR5 operation In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +120 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1) Operating Junction Temperature T 225 C J TotalDevice Dissipation T =25 C P 476 W C D Derate above 25 C 2.38 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case C/W Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10%Duty Cycle, 50 Vdc, I =100 mA, 1300 MHz Z 0.07 DQ JC CW: Case Temperature 77 C, 235 W CW, 50 Vdc, I =10 mA, 1300 MHz R 0.42 DQ JC 1. Continuous use at maximum temperature willaffect MTTF. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.GotoTable3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 120 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.0 1.8 2.7 Vdc GS(th) (V =10Vdc,I =640 Adc) DS D Gate Quiescent Voltage V 2.0 2.4 3.0 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.25 0.3 Vdc DS(on) (V =10Vdc,I =1.58Adc) GS D (1) DynamicCharacteristics Reverse TransferCapacitance C 1.2 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 58 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 340 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =50Vdc,I =100 mA, P =250 W Peak (25 W Avg.), f =1300MHz DD DQ out Pulse, 200 sec Pulse Width, 10%Duty Cycle PowerGain G 21.5 22.7 24.0 dB ps Drain Efficiency 53.5 57.0 % D Input Return Loss IRL --18 --9 dB TypicalCWPerformance (In Freescale CW Application Circuit, 50 ohm system) V =50Vdc,I =10mA,P = 230 W CW, f = 1300MHz, DD DQ out T =61 C C PowerGain G 20.0 dB ps Drain Efficiency 53.0 % D Input Return Loss IRL --25 dB LoadMismatch(In Freescale Application Test Fixture, 50 ohm system)V =50Vdc,I =100 mA, P =250 W Peak (25 W Avg.), DD DQ out f =1300 MHz, Pulse, 200 sec Pulse Width, 10%Duty Cycle VSWR 10:1 at allPhase Angles No Degradation in Output Power 1. Part internally input matched. MMRF1005HR5MMRF1005HSR5 RF DeviceData Freescale Semiconductor 2