Document Number: MRF6S21190H Freescale Semiconductor Rev. 1, 3/2008 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21190HR3 Designed for W-CDMA base station applications with frequencies from 2110 MRF6S21190HSR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- tions. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I = DD DQ 2110-2170 MHz, 54 W AVG., 28 V 1600 mA, P = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1, out 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal SINGLE W-CDMA PAR = 7.5 dB 0.01% Probability on CCDF. LATERAL N-CHANNEL Power Gain 16 dB RF POWER MOSFETs Drain Efficiency 29% Device Output Signal PAR 6.1 dB 0.01% Probability on CCDF ACPR 5 MHz Offset -38 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 2140 MHz, 175 Watts CW Output Power Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use CASE 465B-03, STYLE 1 NI-880 Integrated ESD Protection MRF6S21190HR3 Designed for Digital Predistortion Error Correction Systems Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465C-02, STYLE 1 NI-880S MRF6S21190HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +68 Vdc DSS Gate-Source Voltage V -0.5, +12 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C Operating Junction Temperature T 200 C J CW Operation T = 25C CW 175 W C Derate above 25C 1 W/C Table 2. Thermal Characteristics (1,2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 85C, 120 W CW 0.29 Case Temperature 83C, 56 W CW 0.30 1. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 68 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2 3 Vdc GS(th) (V = 10 Vdc, I = 420 Adc) DS D Gate Quiescent Voltage V 2 2.8 4 Vdc GS(Q) (V = 28 Vdc, I = 1600 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.12 0.21 0.31 Vdc DS(on) (V = 10 Vdc, I = 4.2 Adc) GS D (1) Dynamic Characteristics Reverse Transfer Capacitance C 2.8 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Equivalent Capacitance C 185 pF out (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 526 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, P = 54 W Avg., f = 2112.5 MHz and f = DD DQ out 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. Power Gain G 14.5 16 17.5 dB ps Drain Efficiency 26 29 % D Output Peak-to-Average Ratio 0.01% Probability on CCDF PAR 5.5 6.1 dB Adjacent Channel Power Ratio ACPR -38 -35 dBc Input Return Loss IRL -13 -8 dB Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, 2110-2170 MHz Bandwidth DD DQ Video Bandwidth 175 W PEP P where IM3 = -30 dBc VBW MHz out (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 VBW 50 frequency - IMD3 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth P = 54 W Avg. G 0.16 dB out F Average Deviation from Linear Phase in 60 MHz Bandwidth 0.52 P = 175 W CW out Average Group Delay P = 175 W CW, f = 2140 MHz Delay 2.1 ns out Part-to-Part Insertion Phase Variation P = 175 W CW, 28 out f = 2140 MHz Gain Variation over Temperature G 0.016 dB/C (-30C to +85C) 1. Part internally matched both on input and output. MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 2