DocumentNumber:MRF6V13250H FreescaleSemiconductor Rev. 1, 7/2011 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V13250HR3 RF Power transistors designed for CW and pulsed applications operating at MRF6V13250HSR3 1300 MHz. These devices are suitable for use in CW and pulsed applications. Typical Pulsed Performance: V =50Volts,I = 100 mA DD DQ P f G IRL out ps D SignalType (W) (MHz) (dB) (%) (dB) 1300MHz,250W,50V LATERALN--CHANNEL Pulsed (200sec, 250 Peak 1300 22.7 57.0 --18 RFPOWERMOSFETs 10%Duty Cycle) Typical CW Performance: V =50Volts,I =10mA,T =61C DD DQ C P f G IRL out ps D SignalType (W) (MHz) (dB) (%) (dB) CW 230 CW 1300 20.0 53.0 --25 Capable of Handling a Load Mismatch of 10:1 VSWR, 50 Vdc, 1300 MHz CASE465--06,STYLE1 at all Phase Angles, 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200sec NI--780 Features MRF6V13250HR3 Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matchedfor Easeof Use Operation Qualified Up to a Maximum of 50 V DD Characterized from 20 V to 50 V for Extended Power Range Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C CASE465A--06,STYLE1 Operation NI--780S MRF6V13250HSR3 RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +120 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J TotalDevice Dissipation T =25C P 476 W C D Derate above 25C 2.38 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case C/W Pulsed: Case Temperature 65C, 250 W Pulsed, 200sec Pulse Width, 10%Duty Cycle, 50Vdc, I =100 mA, 1300 MHz Z 0.07 DQ JC CW: Case Temperature 77C, 235 W CW, 50 Vdc, I =10 mA, 1300 MHz R 0.42 DQ JC 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 (Minimum) Machine Model(perEIA/JESD22--A115) B (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 120 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.0 1.8 2.7 Vdc GS(th) (V =10Vdc,I =640Adc) DS D Gate Quiescent Voltage V 2.0 2.4 3.0 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.25 0.3 Vdc DS(on) (V =10Vdc,I =1.58Adc) GS D (1) DynamicCharacteristics Reverse TransferCapacitance C 1.2 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 58 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 340 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =50Vdc,I =100 mA, P =250 W Peak (25 W Avg.), f =1300 MHz DD DQ out Pulsed, 200sec Pulse Width, 10%Duty Cycle PowerGain G 21.5 22.7 24.0 dB ps Drain Efficiency 53.5 57.0 % D Input Return Loss IRL --18 --9 dB TypicalCWPerformance (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I =10mA,P = 230 W CW, f = 1300 MHz, T =61C DD DQ out C PowerGain G 20.0 dB ps Drain Efficiency 53.0 % D Input Return Loss IRL --25 dB LoadMismatch(In Freescale Application Test Fixture, 50 ohm system)V =50Vdc,I =100 mA, P =250 W Peak (25 W Avg.), DD DQ out f =1300 MHz, Pulsed, 200sec Pulse Width, 10%Duty Cycle VSWR 10:1 at allPhase Angles No Degradation in Output Power 1. Part internally input matched. MRF6V13250HR3MRF6V13250HSR3 RF DeviceData Freescale Semiconductor 2