UF28150J RF Power MOSFET Transistor Rev. V1 150 W, 100 - 500 MHz, 28 V Features Package Outline DMOS structure Lower capacitance for broadband operation Common source configuration 1, 2, 3 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 16* A DS Power Dissipation P 389 W D Junction Temperature T 200 C J Storage Temperature T -65 to +150 C STG Thermal Resistance 0.45 C/W JC 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these maximum limits. 3. At 25C Tcase, unless noted. ELECTRICAL SPECIFICATIONS: 25 C Parameter Test Conditions Units Min. Max. Drain-Source Breakdown Voltage V = 0.0 V, I = 20.0 mA* BV 65 GS DS DSS Drain-Source Leakage Current V = 28.0 V, V = 0.0V* I 4.0 DS GS DSS Gate-Source Leakage Current V = 20 V, V = 0.0 V* I 4.0 GS DS GSS Gate Threshold Voltage V = 10.0 V, I = 400.0 mA* V 2.0 6.0 DS DS GS(TH) Forward Transconductance V = 10.0 V, I = 4000.0 mA, V = 1.0 V, 80s pulse* G 2.0 DS DS GS M Input Capacitance V = 28.0V, F = 1.0 MHz* C 180 DS ISS Output Capacitance V = 28.0V, F = 1.0 MHz* C 120 DS OSS Reverse Capacitance V = 28.0V, F = 1.0 MHz* C 32 DS RSS Power Gain V = 28.0 V, I = 400.0 mA, P = 150.0 W, F = 500 MHz G 8 DD DQ OUT P Drain Efficiency V = 28.0 V, I = 400.0 mA, P = 150.0 W, F = 500 MHz 55 DD DQ OUT D Load Mismatch Tolerance V = 28.0 V, I = 400.0 mA, P = 150.0 W, F = 500 MHz VSWR-T 10:1** DD DQ OUT Notes: * Per side ** At all phase angles 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: UF28150J RF Power MOSFET Transistor Rev. V1 150 W, 100 - 500 MHz, 28 V Typical Broadband Performance Curves Capacitance vs Voltage Power Output vs Voltage P =24 W I =400 mA F=500 MHz F=1.0 MHz IN DQ C ISS C OSS C OSS V (V) V (V) DS DD Efficiency vs Frequency Gain vs Frequency V =28V P =100W I =400mA V =28W I =400mA P =150W DD OUT DQ DD DQ OUT 65 60 55 50 Frequency (MHz) Frequency (MHz) Power Output vs Power Input V =28W I =400mA DD DQ Power Input (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: