DocumentNumber:AFT09MS007N FreescaleSemiconductor Rev. 1, 4/2014 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT09MS007NT1 Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device makes it ideal for large--signal, common--source amplifier applications inhandheldradioequipment. 136941MHz,7W,7.5V WIDEBAND NarrowbandPerformance (7.5Vdc,I =100mA,T =25 C,CW) DQ A RFPOWERLDMOSTRANSISTOR Frequency G P ps D out (MHz) (dB) (%) (W) (1) 870 15.2 71.0 7.3 WidebandPerformance (7.5Vdc,T =25 C,CW) A Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) 136174 0.25 14.6 69.0 7.2 PLD--1.5W (2,5) 350470 0.20 15.6 60.9 7.3 (3,5) 450520 0.22 15.4 56.0 7.5 (4,5) 760860 0.23 15.1 48.1 7.5 LoadMismatch/Ruggedness Frequency Signal P Test Gate Drain in (MHz) Type VSWR (W) Voltage Result (1) 870 CW >65:1 at all 0.4 10.8 NoDevice PhaseAngles (3dB Overdrive) Degradation 1. Measuredin870MHz narrowbandtest circuit. Note: Thecenterpadonthebacksideof 2. Measuredin350470MHz UHFbroadbandreference circuit. thepackageis thesourceterminal 3. Measuredin450520MHz UHFbroadbandreference circuit. forthetransistor. 4. Measuredin760860MHz UHFbroadbandreference circuit. 5. The values shown are the minimum measuredperformancenumbers across the Figure1.PinConnections indicatedfrequency range. Features Characterizedfor Operationfrom 136to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband Full Power Across theBand Exceptional Thermal Performance ExtremeRuggedness HighLinearity for: TETRA, SSB InTapeandReel. T1Suffix = 1,000Units, 16mm TapeWidth, 7--inchReel. TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700800MHz HandheldRadio FreescaleSemiconductor, Inc., 20132014. All rights reserved. AFT09MS007NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS Operating Voltage V 12.5,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperature T 40to+150 C J TotalDeviceDissipation T =25 C P 114 W C D Derateabove25 C 0.91 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.1 C/W JC CaseTemperature74C,7W CW,7.5Vdc,I =100mA,870MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =30Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =110 Adc) DS D Drain--SourceOn--Voltage V 0.12 Vdc DS(on) (V =10Vdc,I =1.1Adc) GS D ForwardTransconductance g 9.8 S fs (V =7.5Vdc,I =3Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 2.7 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 56 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 107 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat