X-On Electronics has gained recognition as a prominent supplier of AFT09MS007NT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT09MS007NT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT09MS007NT1 NXP

AFT09MS007NT1 electronic component of NXP
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Part No.AFT09MS007NT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors LANDMOBILE 7W PLD1.5W
Datasheet: AFT09MS007NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.092 ea
Line Total: USD 4.09 
Availability - 3813
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3813
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 4.092
10 : USD 3.19
25 : USD 2.992
100 : USD 2.739
250 : USD 2.64
500 : USD 2.607
1000 : USD 2.475
2000 : USD 2.475
5000 : USD 2.475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the AFT09MS007NT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT09MS007NT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFT09MS007N FreescaleSemiconductor Rev. 1, 4/2014 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT09MS007NT1 Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device makes it ideal for large--signal, common--source amplifier applications inhandheldradioequipment. 136941MHz,7W,7.5V WIDEBAND NarrowbandPerformance (7.5Vdc,I =100mA,T =25 C,CW) DQ A RFPOWERLDMOSTRANSISTOR Frequency G P ps D out (MHz) (dB) (%) (W) (1) 870 15.2 71.0 7.3 WidebandPerformance (7.5Vdc,T =25 C,CW) A Frequency P G P in ps D out (MHz) (W) (dB) (%) (W) 136174 0.25 14.6 69.0 7.2 PLD--1.5W (2,5) 350470 0.20 15.6 60.9 7.3 (3,5) 450520 0.22 15.4 56.0 7.5 (4,5) 760860 0.23 15.1 48.1 7.5 LoadMismatch/Ruggedness Frequency Signal P Test Gate Drain in (MHz) Type VSWR (W) Voltage Result (1) 870 CW >65:1 at all 0.4 10.8 NoDevice PhaseAngles (3dB Overdrive) Degradation 1. Measuredin870MHz narrowbandtest circuit. Note: Thecenterpadonthebacksideof 2. Measuredin350470MHz UHFbroadbandreference circuit. thepackageis thesourceterminal 3. Measuredin450520MHz UHFbroadbandreference circuit. forthetransistor. 4. Measuredin760860MHz UHFbroadbandreference circuit. 5. The values shown are the minimum measuredperformancenumbers across the Figure1.PinConnections indicatedfrequency range. Features Characterizedfor Operationfrom 136to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband Full Power Across theBand Exceptional Thermal Performance ExtremeRuggedness HighLinearity for: TETRA, SSB InTapeandReel. T1Suffix = 1,000Units, 16mm TapeWidth, 7--inchReel. TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700800MHz HandheldRadio FreescaleSemiconductor, Inc., 20132014. All rights reserved. AFT09MS007NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS Operating Voltage V 12.5,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperature T 40to+150 C J TotalDeviceDissipation T =25 C P 114 W C D Derateabove25 C 0.91 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.1 C/W JC CaseTemperature74C,7W CW,7.5Vdc,I =100mA,870MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =30Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =110 Adc) DS D Drain--SourceOn--Voltage V 0.12 Vdc DS(on) (V =10Vdc,I =1.1Adc) GS D ForwardTransconductance g 9.8 S fs (V =7.5Vdc,I =3Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 2.7 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 56 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 107 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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