BF1102R,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102 BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102 BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102 BF1102R Specially designed for 5 V applications 1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC 2 gate 2 (1 and 2) source (1 and 2) High forward transfer admittance 3 drain (1) drain (1) High forward transfer admittance to input capacitance 4 drain (2) drain (2) ratio. 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional handbook, halfpage g (1, 2) 2 communications equipment. 6 5 4 DESCRIPTION g (1) AMP1 d (1) 1 The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and g (2) d (2) AMP2 substrate an internal bias circuit enables DC stabilization 1 and a very good cross-modulation performance at 5 V 132 supply voltage integrated diodes between the gates and BF1102 marking code: W1. BF1102R marking code: W2-. source protect against excessive input voltage surges. s (1, 2) MBL029 Both devices have a SOT363 micro-miniature plastic Fig.1 Simplified outline and symbol. package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified V drain-source voltage 7V DS I drain current (DC) 40 mA D P total power dissipation T 102 C note 1 200 mW tot s y forward transfer admittance I =15mA 36 43 mS fs D C input capacitance at gate 1 I =15mA 2.8 3.6 pF ig1-s D C reverse transfer capacitance f = 1 MHz 30 50 fF rss F noise figure f = 800 MHz 22.8 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 dB V mod T operating junction temperature 150 C j Note 1. T is the temperature at the soldering point of the source lead. s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Apr 11 2