BLF246B VHF push-pull power MOS transistor Rev. 8 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF push-pull power MOS transistor BLF246B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 2468 handbook, halfpage Gold metallization ensures excellent reliability. d 2 g 2 s g APPLICATIONS 1 d 1 Large signal applications in the VHF 1357 frequency range. MBB157 Top view MBC826 DESCRIPTION Dual silicon N-channel enhancement Fig.1 Simplified outline and symbol. mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are CAUTION isolated from the flange. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, PINNING - SOT161A refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PIN DESCRIPTION 1 source WARNING 2 source Product and environmental safety - toxic materials 3 drain 1 This product contains beryllium oxide. The product is entirely safe provided 4 gate 1 that the BeO disc is not damaged. All persons who handle, use or dispose of 5 drain 2 this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to 6 gate 2 the regulations applying at the location of the user. It must never be thrown 7 source out with the general or domestic waste. 8 source QUICK REFERENCE DATA RF performance at T =25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-AB 175 28 60 >14 >55 2003 Aug 04 2