X-On Electronics has gained recognition as a prominent supplier of BLF246B,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF246B,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF246B,112 NXP

BLF246B,112 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BLF246B,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 60W VHF P-P
Datasheet: BLF246B,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 95.1229 ea
Line Total: USD 95.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 95.1229
2 : USD 93.131
3 : USD 91.8274
5 : USD 90.3788

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF246B,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF246B,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF246B VHF push-pull power MOS transistor Rev. 8 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF push-pull power MOS transistor BLF246B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 2468 handbook, halfpage Gold metallization ensures excellent reliability. d 2 g 2 s g APPLICATIONS 1 d 1 Large signal applications in the VHF 1357 frequency range. MBB157 Top view MBC826 DESCRIPTION Dual silicon N-channel enhancement Fig.1 Simplified outline and symbol. mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are CAUTION isolated from the flange. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, PINNING - SOT161A refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PIN DESCRIPTION 1 source WARNING 2 source Product and environmental safety - toxic materials 3 drain 1 This product contains beryllium oxide. The product is entirely safe provided 4 gate 1 that the BeO disc is not damaged. All persons who handle, use or dispose of 5 drain 2 this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to 6 gate 2 the regulations applying at the location of the user. It must never be thrown 7 source out with the general or domestic waste. 8 source QUICK REFERENCE DATA RF performance at T =25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-AB 175 28 60 >14 >55 2003 Aug 04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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