X-On Electronics has gained recognition as a prominent supplier of NE5550234-AZ RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. NE5550234-AZ RF MOSFET Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

NE5550234-AZ CEL

NE5550234-AZ electronic component of CEL
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See Product Specifications
Part No.NE5550234-AZ
Manufacturer: CEL
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Pout 33dBm Gain 23.5dB
Datasheet: NE5550234-AZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.4872 ea
Line Total: USD 14.87 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 10
Multiples : 1
10 : USD 1.4872
300 : USD 1.4075

   
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We are delighted to provide the NE5550234-AZ from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE5550234-AZ and other electronic components in the RF MOSFET Transistors category and beyond.

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A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Silicon Power MOS FET Mar 12, 2013 FEATURES High Output Power : P = 33.0 dBm TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 15 dBm) out DS Dset in High power added efficiency : = 68% TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 15 dBm) add DS Dset in High Linear gain : G = 23.5 dB TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 0 dBm) L DS Dset in High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5550234 NE5550234-AZ 3-pin V5 12 mm wide embossed taping power Gate pin faces the perforation side of the tape minimold NE5550234-T1 NE5550234-T1-AZ 12 mm wide embossed taping (34 PKG) Gate pin faces the perforation side of the tape (Pb-Free) Qty 1 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550234-AZ ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) A Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage V 30 V DS Gate to Source Voltage V 6.0 V GS Drain Current I 0.6 A DS Drain Current I 1.2 A DS-pulse (50% Duty Pulsed) Note Total Power Dissipation P 12.5 W tot Channel Temperature T 150 C ch Storage Temperature T 65 to +150 C stg Note: Value at T = 25C C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0039EJ0300 Rev.3.00 Page 1 of 14 Mar 12, 2013 PHASE-OUTA Business Partner of Renesas Electronics Corporation. NE5550234 RECOMMENDED OPERATING RANGE (T = 25C) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage V 7.5 9.0 V DS Gate to Source Voltage V 1.65 2.20 2.85 V GS Drain Current I 0.38 A DS Input Power P f = 460 MHz, V = 7.5 V 15 20 dBm in DS ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Gate to Source Leakage Current I V = 6.0 V 100 nA GSS GS Drain to Source Leakage Current I V = 25 V 10 A DSS DS (Zero Gate Voltage Drain Current) Gate Threshold Voltage V V = 7.5 V, I = 1.0 mA 1.15 1.65 2.25 V th DS DS Drain to Source Breakdown Voltage BV I = 10 A 25 38 V DSS DS Transconductance G V = 7.5 V, I = 14020 mA 0.44 S m DS DS Thermal Resistance R Channel to Case 10.0 C/W th RF Characteristics Output Power P f = 460 MHz, V = 7.5 V, 31.5 33.0 dBm out DS Drain Current I P = 15 dBm, 0.38 A DS in Power Drain Efficiency I = 40 mA (RF OFF) 70 % d Dset Power Added Efficiency 68 % add Note 1 Linear Gain G 23.5 dB L Note 2 Load VSWR Tolerance f = 460 MHz, V = 9.0 V, No Destroy DS P = 15 dBm, in I = 40 mA (RF OFF) Dset Load VSWR=20:1(All Phase) Output Power P f = 157 MHz, V = 7.5 V, 33.0 dBm out DS Drain Current I P = 15 dBm, 0.36 A DS in I = 40 mA (RF OFF) Power Drain Efficiency Dset 74 % d Power Added Efficiency 73 % add Note 3 Linear Gain G 25.8 dB L Output Power P f = 900 MHz, V = 7.5 V, 32.2 dBm out DS P = 17 dBm, Drain Current I in 0.35 A DS I = 40 mA (RF OFF) Power Drain Efficiency Dset 62 % d Power Added Efficiency 60 % add Note 4 Linear Gain G 18.3 dB L Notes: 1. P = 0 dBm in 2. These characteristics values are measurement using measurement tools especially by RENESAS. 3. P = 5 dBm in 4. P = 7 dBm in Remark DC performance is 100% testing. RF performance is testing several samples per wafer. The wafer rejection criterion for standard devices is 1 reject for several samples. R09DS0039EJ0300 Rev.3.00 Page 2 of 14 Mar 12, 2013 PHASE-OUT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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