A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Silicon Power MOS FET Mar 12, 2013 FEATURES High Output Power : P = 33.0 dBm TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 15 dBm) out DS Dset in High power added efficiency : = 68% TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 15 dBm) add DS Dset in High Linear gain : G = 23.5 dB TYP. (V = 7.5 V, I = 40 mA, f = 460 MHz, P = 0 dBm) L DS Dset in High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5550234 NE5550234-AZ 3-pin V5 12 mm wide embossed taping power Gate pin faces the perforation side of the tape minimold NE5550234-T1 NE5550234-T1-AZ 12 mm wide embossed taping (34 PKG) Gate pin faces the perforation side of the tape (Pb-Free) Qty 1 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550234-AZ ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) A Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage V 30 V DS Gate to Source Voltage V 6.0 V GS Drain Current I 0.6 A DS Drain Current I 1.2 A DS-pulse (50% Duty Pulsed) Note Total Power Dissipation P 12.5 W tot Channel Temperature T 150 C ch Storage Temperature T 65 to +150 C stg Note: Value at T = 25C C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0039EJ0300 Rev.3.00 Page 1 of 14 Mar 12, 2013 PHASE-OUTA Business Partner of Renesas Electronics Corporation. NE5550234 RECOMMENDED OPERATING RANGE (T = 25C) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage V 7.5 9.0 V DS Gate to Source Voltage V 1.65 2.20 2.85 V GS Drain Current I 0.38 A DS Input Power P f = 460 MHz, V = 7.5 V 15 20 dBm in DS ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Gate to Source Leakage Current I V = 6.0 V 100 nA GSS GS Drain to Source Leakage Current I V = 25 V 10 A DSS DS (Zero Gate Voltage Drain Current) Gate Threshold Voltage V V = 7.5 V, I = 1.0 mA 1.15 1.65 2.25 V th DS DS Drain to Source Breakdown Voltage BV I = 10 A 25 38 V DSS DS Transconductance G V = 7.5 V, I = 14020 mA 0.44 S m DS DS Thermal Resistance R Channel to Case 10.0 C/W th RF Characteristics Output Power P f = 460 MHz, V = 7.5 V, 31.5 33.0 dBm out DS Drain Current I P = 15 dBm, 0.38 A DS in Power Drain Efficiency I = 40 mA (RF OFF) 70 % d Dset Power Added Efficiency 68 % add Note 1 Linear Gain G 23.5 dB L Note 2 Load VSWR Tolerance f = 460 MHz, V = 9.0 V, No Destroy DS P = 15 dBm, in I = 40 mA (RF OFF) Dset Load VSWR=20:1(All Phase) Output Power P f = 157 MHz, V = 7.5 V, 33.0 dBm out DS Drain Current I P = 15 dBm, 0.36 A DS in I = 40 mA (RF OFF) Power Drain Efficiency Dset 74 % d Power Added Efficiency 73 % add Note 3 Linear Gain G 25.8 dB L Output Power P f = 900 MHz, V = 7.5 V, 32.2 dBm out DS P = 17 dBm, Drain Current I in 0.35 A DS I = 40 mA (RF OFF) Power Drain Efficiency Dset 62 % d Power Added Efficiency 60 % add Note 4 Linear Gain G 18.3 dB L Notes: 1. P = 0 dBm in 2. These characteristics values are measurement using measurement tools especially by RENESAS. 3. P = 5 dBm in 4. P = 7 dBm in Remark DC performance is 100% testing. RF performance is testing several samples per wafer. The wafer rejection criterion for standard devices is 1 reject for several samples. R09DS0039EJ0300 Rev.3.00 Page 2 of 14 Mar 12, 2013 PHASE-OUT