BSB013NE2LXI TM OptiMOS Power-MOSFET Product Summary Features V 25 V DS Optimized SyncFET for high performance Buck converter R 1.3 mW DS(on),max Integrated monolithic Schottky like diode I 163 A D Low profile (<0.7 mm) Q 39 nC oss 100% avalanche tested Q (0V..10V) 62 nC g 100% R Tested G Double-sided cooling TM CanPAK M 1) Compatible with DirectFET package MX footprint and outline MG-WDSON-2 2) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Type Package Outline Marking BSB013NE2LXI MG-WDSON-2 MX 02E2 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 163 A D GS C V =10 V, T =100C 103 GS C V =10 V, T =25C, GS A 36 3) R =45K/W thJA 4) I T =25C 400 Pulsed drain current D,pulse C 5) I T =25C 40 Avalanche current, single pulse AS C E Avalanche energy, single pulse I =40A, R =25W 130 mJ AS D GS Gate source voltage V 20 V GS 1) TM CanPAK uses DirectFET technology licensed from International Rectifier Corporation. DirectFET is a registered trademark of International Rectifier Corporation. 2) J-STD20 and JESD22 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) See figure 3 for more detailed information 5) See figure 13 for more detailed information Rev. 2.4 page 1 2013-02-12 BSB013NE2LXI Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 57 W tot C T =25 C, A 2.8 R =45K/W thJA Operating and storage temperature T , T -40 150 C j stg IEC climatic category DIN IEC 68-1 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - 1.0 - K/W thJC top - - 2.2 2 3) Device on PCB R - - 45 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =10mA Drain-source breakdown voltage 25 - - V (BR)DSS GS D dV I =10mA, referenced (BR)DSS D Breakdown voltage temperature coefficient - 15 - mV/K /dT to 25C j V V =V , I =250A Gate threshold voltage 1.2 - 2 V GS(th) DS GS D V =20V, V =0V, DS GS Zero gate voltage drain current I - 25 500 A DSS T =25C j V =20V, V =0V, DS GS - 4 - mA T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =4.5V, I =30A Drain-source on-state resistance - 1.4 1.8 mW DS(on) GS D V =10V, I =30A - 1.1 1.3 GS D Gate resistance R 0.3 0.6 1.2 W G V >2 I R , DS D DS(on)max Transconductance g 85 170 - S fs I =30A D Rev. 2.4 page 2 2013-02-12