X-On Electronics has gained recognition as a prominent supplier of BF1100WR,115 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF1100WR,115 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF1100WR,115 NXP

BF1100WR,115 electronic component of NXP

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Part No.	BF1100WR,115
Manufacturer:	NXP
Category:	RF MOSFET Transistors
Description:	Trans RF MOSFET N-CH 14V 0.03A 4-Pin(3+Tab) CMPAK T/R
Datasheet:	BF1100WR,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

89: USD 0.2963 ea
Line Total: USD 26.37

Availability - 0

MOQ: 89 Multiples: 1
Pack Size: 1

BF1100WR,115 More Buying Options & Price Grid(s)

Specifications

Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON 1 1
Id - Continuous Drain Current 0.03 A 0.03 A
Operating Frequency 1000 MHz 1000 MHz
Pd - Power Dissipation 280 (mW) 280 (mW)
Mounting Style Surface Mount Surface Mount
Packaging Tape And Reel Tape And Reel
Brand Nxp Semiconductors Nxp Semiconductors
Operating Temp Range - 65 C to 150 C - 65 C to 150 C
Package Type CMPAK CMPAK
Pin Count 3 + Tab 3 + Tab
Number Of Elements 2 2
Channel Type N N
Screening Level Military Military
Channel Mode Enhancement Enhancement
Rad Hardened No No
Output Capacitance Typ Vds 1.4@9v/1.1@12v pF 1.4@9v/1.1@12v pF
Reverse Capacitance Typ 0.025@9v/0.025@12v pF 0.025@9v/0.025@12v pF
Noise Figure Max 2.8(Db) 2.8(Db)
Drain Source Voltage Max 14 V 14 V

We are delighted to provide the BF1100WR,115 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF1100WR,115 and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g gate 2 2 Superior cross-modulation performance during AGC. 4g gate 1 1 APPLICATIONS d handbook, halfpage VHF and UHF applications such as television tuners and professional communications equipment. 34 DESCRIPTION g 2 Enhancement type field-effect transistor in a plastic g microminiature SOT343R package. The transistor 1 consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to 21 ensure good cross-modulation performance during AGC. s,b Top view MAM192 CAUTION Marking code: MF. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 14 V DS I drain current 30 mA D P total power dissipation 280 mW tot T operating junction temperature 150 C j y forward transfer admittance 24 28 33 mS fs C input capacitance at gate 1 2.2 2.6 pF ig1-s C reverse transfer capacitance f = 1 MHz 25 35 fF rs F noise figure f = 800 MHz 2 dB 1995 Apr 25 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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