XD1001-BD-000V MACOM

XD1001-BD Distributed Amplifier Rev. V1 18-50 GHz Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 RoHS* Compliant and 260C Reflow Compatible Description M/A-COM Techs 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 Absolute Maximum Ratings dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a Parameter Absolute Max. +15 dBm P1dB compression point. This MMIC uses Supply Voltage (Vd) +6.0 VDC M/A-COM Techs GaAs PHEMT device model technology, and is based upon electron beam Supply Current (Id) 220 mA lithography to ensure high repeatability and Gate Bias Voltage (Vg) +0.3 V uniformity. The chip has surface passivation to Input Power (Pin) +15 dBm protect and provide a rugged part with backside via Storage Temperature (Tstg) -65 C to +165 C holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach Operating Temperature (Ta) -55 C to +85 C process. This device is well suited for microwave, 1 Channel Temperature (Tch) +175 C millimeter-wave and wideband military applications. (1) Channel temperature affects a device s MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Ordering Information Part Number Package V - vacuum release gel XD1001-BD-000V paks XD1001-BD-EV1 evaluation module 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XD1001-BD Distributed Amplifier Rev. V1 18-50 GHz Electrical Specifications: 18-50 GHz (Ambient Temperature T = 25C) Parameter Units Min. Typ. Max. 2 Input Return Loss (S11) dB 5.0 10.0 - 2 Output Return Loss (S22) dB 6.0 11.0 - 2 Small Signal Gain (S21) dB 13.0 17.0 - dB - +/-1.0 - Gain Flatness (S21) Gain Control dB - 30.0 - 2 Reverse Isolation (S12) dB 30.0 40.0 - Noise Figure (NF) dB - 5.0 - 1 Output Power for 1dB Compression Point (P1dB) dBm - +15.0 - 1 Output Third Order Intercept Point (OIP3) dBm - +24.0 - Drain Bias Voltage (Vd) VDC - +5.0 +5.5 Gain Control Bias (Vg) VDC -2.0 0.0 +0.1 Supply Current (Id) (Vd=5.0 V, Vg=-0.0 V Typical) mA - 160 190 1. Measured using constant current. 2. Unless otherwise indicated Min/Max over 18.0-50.0 GHz and biased at Vd=5 V, Id=160 mA 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: