Ordering number : EN8250B 2SK3748 N-Channel Power MOSFET 2SK3748 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 1500 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.5 3.5 V GS DS D Forward Transfer Admittance yfs V =20V, I =2A 1.7 2.8 S DS D Static Drain-to-Source On-State Resistance R (on) I =2A, V =10V 57 DS D GS Input Capacitance Ciss 790 pF Output Capacitance Coss V =30V, f=1MHz 140 pF DS Reverse Transfer Capacitance Crss 70 pF Turn-ON Delay Time t (on) 17 ns d Rise Time t 75 ns r See Fig.2 Turn-OFF Delay Time t (off) 360 ns d Fall Time t 116 ns f Total Gate Charge Qg 80 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =4A 6.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 36 nC Diode Forward Voltage V I =4A, V =0V 0.94 1.2 V SD S GS Reverse Recovery Time t I =4A, V =0V, dis/dt=100A/ s 340 ns rr S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V DD V IN 200V L 50 10V RG 0V I =2A D V IN R =100 L 2SK3748 10V D V OUT V 50 DD 0V PW=10 s D.C.0.5% G 2SK3748 P.G S R GS 50 Ordering Information Device Package Shipping memo 2SK3748-1E TO-3PF-3L 30pcs./magazine Pb Free No.8250-2/7