Ordering number : ENA0396E 2SK4062LS N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4062LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 450 V DSS Gate-to-Source Voltage V 30 V GSS I *1 Limited only by maximum temperature 18 A Dc Drain Current (DC) I *2 Tc=25C (SANYOs ideal heat dissipation condition)*3 12.9 A Dpack Drain Current (Pulse) I 72 A DP 2.0 W Allowable Power Dissipation P D Tc=25C (SANYOs ideal heat dissipation condition)*3 40 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 E 1.03 J AS Avalanche Current *5 I 18 A AV *1 Shows chip capability *2 Package limited *3 SANYOs condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 V =99V, L=5mH, I =18A DD AV *5 L5mH, single pulse Marking : K4062 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. www.semiconductor-sanyo.com/network O1007 TI IM TC-00000923 / 30707 TI IM TC-00000552 / 70306 MS IM TB-00002430 / 52506QB MS IM TB-00002328 No. A0396-1/5 O2208 MS IM TC-00001654 /2SK4062LS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 450 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =450V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3 5 V GS DS D Forward Transfer Admittance yfs V =10V, I =9A 6 12 S DS D Static Drain-to-Source On-State Resistance R (on) I =9A, V =15V 0.24 0.32 DS D GS Input Capacitance Ciss V =30V, f=1MHz 2150 pF DS Output Capacitance Coss V =30V, f=1MHz 230 pF DS V =30V, f=1MHz 15 pF DS Reverse Transfer Capacitance Crss V =5V, f=1MHz 31 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 52 ns d Rise Time t See specified Test Circuit. 114 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 78 ns d Fall Time t See specified Test Circuit. 70 ns f Total Gate Charge Qg V =200V, V =10V, I =18A 39 nC DS GS D Gate-to-Source Charge Qgs V =200V, V =10V, I =18A 15 nC DS GS D Gate-to-Drain Miller Charge Qgd V =200V, V =10V, I =18A 15 nC DS GS D Diode Forward Voltage V I =18A, V =0V 0.97 1.2 V SD S GS Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 : Gate 12 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI(LS) Switching Time Test Circuit Avalanche Resistance Test Circuit V V =200V IN DD 10V L 0V 50 I =9A D V RG R =22 IN L V D OUT PW=10s 2SK4062LS D.C.0.5% 15V 50 V DD 0V G S 2SK4062LS P.G R =50 GS No. A0396-2/5 3.6 3.5 2.4 7.2 14.0 16.0 0.6 16.1