Ordering number : ENA0747B 2SK4125 N-Channel Power MOSFET 2SK4125 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 600 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =480V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3 5 V GS DS D Forward Transfer Admittance yfs V =10V, I =8.5A 4.5 9 S DS D Static Drain-to-Source On-State Resistance R (on) I =7A, V =10V 0.47 0.61 DS D GS Input Capacitance Ciss 1200 pF Output Capacitance Coss V =30V, f=1MHz 220 pF DS Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time t (on) 26.5 ns d Rise Time t 82 ns r See Fig.2 Turn-OFF Delay Time t (off) 145 ns d Fall Time t 52 ns f Total Gate Charge Qg 46 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =17A 8.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 26.7 nC Diode Forward Voltage V I =17A, V =0V 1.0 1.3 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD 10V L 0V I =8.5A 50 D V R =23.5 IN RG L D V OUT PW=10s 2SK4125 D.C.0.5% 10V V 50 G DD 0V 2SK4125 P.G S R =50 GS Ordering Information Device Package Shipping memo 2SK4125-1E TO-3P-3L 30pcs./magazine Pb Free I -- V I -- V D DS D GS 40 35 V =20V Tc=25C DS Tc= --25C 35 30 30 25 25C 25 20 75C 20 15 15 10 10 6V 5 5 V =5V GS 0 0 05210 15 205 300221416802 14 16 180 Drain-to-Source Voltage, V -- V IT11753 Gate-to-Source Voltage, V -- V IT11754 DS GS No. A0747-2/7 8V 10V 15V Drain Current, I -- A D Drain Current, I -- A D