LOT No. LOT No. Ordering number : EN2550B 2SK536 N-Channel MOSFET Coss 2SK536 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =10A, V =0V 50 V (BR)DS D GS Gate to Source Leakage Current I V =10V, V =0V 0.01 10 nA GSS GS DS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Cutoff Voltage I (off) V =10V, I =100A 0.3 0.9 1.5 V GS DS D Forward Transfer Admittance yfs V =10V, I =50mA, f=1kHz 25 40 mS DS D Input Capacitance Ciss 15 pF Output Capacitance Coss V =10V, V =0V, f=1MHz 6pF DS GS Reverse Transfer Capacitance Crss 0.5 pF Drain to Source ON Resistance R (on) V =10V, I =10mA 20 DS GS D I -- V I -- V D GS D DS 160 160 V =10V DS 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 02 4 6 8 10 12 14 02 4 6 8 10 Drain to Source Voltage, V -- V ITR00795 Gate to Source Voltage, V -- V ITR00796 DS GS yfs -- I yfs -- V D GS 2 60 V =10V DS 100 50 7 5 40 3 30 2 20 10 7 10 5 3 0 752 3 7253 5 7 2 3 0.6 1.0 1.4 1.8 2.2 2.6 3.0 1.0 10 100 ITR00797 ITR00798 Drain Current, I -- mA Gate to Source Voltage, V -- V D GS R (on) -- V Ciss, Coss, Crss -- V DS GS DS 50 20 I =10mA D 18 16 40 Ciss 14 30 12 10 20 8 6 10 4 2 0 0 02 4 6 8 10 12 14 16 0 2 468 10 12 14 16 ITR00799 Drain to Source Voltage, V -- V ITR00800 Gate to Source Voltage, V -- V DS GS No.2550-2/4 Crss 1.5V 2.5V 2.0V 4.5V 4.0V 3.5V 3.0V 1V 3V V =10V DS V =5.0V GS On Resistance, R (on) -- Forward Transfer Admittance, yfs -- mS Drain Current, I -- mA DS D Input Capacitance, Ciss -- pF Output Capacitance, Coss -- pF Drain Current, I -- mA Forward Transfer Admittance, yfs -- mS Reverse Transfer Capacitance, Crss -- pF D