DATA SHEET www.onsemi.com Small Signal MOSFET V R MAX I MAX (BR)DSS DS(on) D 1.6 10 V 60 V, 380 mA, Single, NChannel, SOT23 60 V 380 mA 2.5 4.5 V 2N7002K, 2V7002K SIMPLIFIED SCHEMATIC Features Gate 1 ESD Protected Low R DS(on) Surface Mount Package 3 Drain 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and Source 2 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Top View) Compliant MARKING DIAGRAM Applications & PIN ASSIGNMENT 3 Low Side Load Switch Drain Level Shift Circuits 3 1 DCDC Converter 2 Portable Applications i.e. DSC, PDA, Cell Phone, etc. 704 M SOT23 CASE 318 MAXIMUM RATINGS (T = 25C unless otherwise stated) J 1 2 STYLE 21 Rating Symbol Value Unit Gate Source DraintoSource Voltage V 60 V 704 = Specific Device Code* DSS M = Date Code* GatetoSource Voltage V 20 V GS = PbFree Package Drain Current (Note 1) I mA (Note: Microdot may be in either location) D Steady State 1 sq in Pad T = 25C 380 A *Specific Device Code, Date Code or overbar T = 85C 270 A orientation and/or location may vary depend- ing upon manufacturing location. This is a Drain Current (Note 2) I mA D representation only and actual devices may Steady State Minimum Pad T = 25C 320 A not match this drawing exactly. T = 85C 230 A Power Dissipation P mW ORDERING INFORMATION D Steady State 1 sq in Pad 420 Steady State Minimum Pad 300 Device Package Shipping I 5.0 A Pulsed Drain Current (t = 10 s) p DM 2N7002KT1G, SOT23 3000 / Tape & Reel 2V7002KT1G (PbFree) Operating Junction and Storage T , T 55 to C J STG Temperature Range +150 2N7002KT7G SOT23 3500 / Tape & Reel (PbFree) Source Current (Body Diode) I 300 mA S For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specifications GateSource ESD Rating ESD 2000 V Brochure, BRD8011/D. (HBM, Method 3015) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sq in pad size with 1 oz Cu. 2. Surfacemounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: August, 2021 Rev. 18 2N7002K/D2N7002K, 2V7002K THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 300 C/W JA JunctiontoAmbient t 5 s (Note 3) 92 JunctiontoAmbient Steady State (Note 4) 417 JunctiontoAmbient t 5 s (Note 4) 154 3. Surfacemounted on FR4 board using 1 sq in pad size with 1 oz Cu. 4. Surfacemounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 71 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS V = 0 V, J GS V = 60 V DS T = 125C 10 J T = 25C 100 nA V = 0 V, GS J V = 50 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 10 A GSS DS GS V = 0 V, V = 10 V 450 nA DS GS V = 0 V, V = 5.0 V 150 nA DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.3 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 500 mA 1.19 1.6 DS(on) GS D V = 4.5 V, I = 200 mA 1.33 2.5 GS D Forward Transconductance g V = 5 V, I = 200 mA 530 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C 24.5 45 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.2 8.0 OSS V = 20 V DS Reverse Transfer Capacitance C 2.2 5.0 RSS Total Gate Charge Q 0.7 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V GS DS I = 200 mA D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.1 GD SWITCHING CHARACTERISTICS, V = V (Note 6) GS ns TurnOn Delay Time t 12.2 d(ON) Rise Time t 9.0 r V = 10 V, V = 25 V, GS DD I = 500 mA, R = 25 TurnOff Delay Time t 55.8 D G d(OFF) Fall Time t 29 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD V = 0 V, J GS I = 200 mA S T = 85C 0.7 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2