2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Electrical Connection Marking Adoption of FBET Process Large yfs 2 1 : Source K715 Small Ciss 2 : Gate LOT No. Very Low Noise Figure 3 : Drain Specifications Absolute Maximum Ratings at Ta=25C 1 3 Parameter Symbol Ratings Unit Drain-to-Source Voltage V 15 V DSS Gate-to-Drain Voltage V --15 V GDS 2SK715U-AC Gate Current I 10 mA 2SK715V-AC G Drain Current I 50 mA 2SK715W-AC D Allowable Power Dissipation P 300 mW D Junction Temperature Tj 125 C TO-92-3 / SPA-WA Storage Temperature Tstg --55 to +125 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V I =--10mA, V =0V --15 V (BR)GDS G DS Gate-to-Source Leakage Current I V =--10V, V =0V --1.0 nA GSS GS DS Zero-Gate Voltage Drain Current I * V =5V, V =0V 7.3* 24.0* mA DSS DS GS Cutoff Voltage V (off) V =5V, I =100mA --0.6 --1.4 V GS DS D Forward Transfer Admittance yfs V =5V, V =0V, f=1kHz 25 50 mS DS GS Input Capacitance Ciss 10 pF V =5V, V =0V, f=1MHz DS GS Reverse Transfer Capacitance Crss 3.0 pF Noise Figure V =5V, R =1k, I =1mA, f=1kHz 1.5 dB NF DS g D : The 2SK715 is classified by I as follows : (unit : mA) * DSS Rank U V W I 7.3 to 12.0 10.0 to 17.0 14.5 to 24.0 DSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 Publication Order Number : 1 March 2015 - Rev. 1 2SK715/D Rank2SK715 I -- V I -- V D DS D DS 16 16 12 12 8 8 4 4 0 0 0 0.4 0.8 1.2 1.6 2.0 024 68 10 Drain-to-Source Voltage, V -- V Gate-to-Source Voltage, V -- V HD00869 HD00870 DS GS I -- V V (off) -- I D GS GS DSS 40 2 V =5V V =5V DS DS I =100mA D --1.0 30 7 5 20 3 10 2 0 --0.1 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 3557 23 10 Gate-to-Source Voltage, V -- V Drain Current, I -- mA HD00871 HD00872 GS DSS yfs -- I yfs -- I DSS D 100 2 V =5V V =5V DS DS V =0V f=1kHz GS 7 f=1kHz 100 7 5 5 3 3 2 2 10 7 10 5 325 7 3 5 752 3772 3 5 1.0 10 10 Drain Current, I -- mA HD00873 Drain Current, I -- mA HD00874 DSS D Ciss -- V Crss -- V DS DS 2 3 V =0V V =0V GS GS f=1MHz f=1MHz 2 10 7 10 5 7 3 5 2 3 2 1.0 7 23 57 2 3 7 23 57 23 1.0 10 1.0 10 Drain-to-Source Voltage, V -- V Drain-to-Source Voltage, V -- V HD00875 HD00876 DS DS www.onsemi.com 2 --0.6V --0.3V --0.4V --0.5V --0.2V --0.4V --0.3V --0.5V V =0V GS --0.1V --0.1V --0.2V 20mA I =10mA DSS 10mA I =20mA DSS V =0V GS Input Capacitance, Ciss -- pF Drain Current, I -- mA Forward Transfer Admittance, yfs -- mS Drain Current, I -- mA D D Reverse Transfer Capacitance, Crss -- pF Drain Current, I -- mA Forward Transfer Admittance, yfs -- mS Cutoff Voltage, V (off) -- V D GS