X-On Electronics has gained recognition as a prominent supplier of 2SK880GRTE85LF JFET across the USA, India, Europe, Australia, and various other global locations. 2SK880GRTE85LF JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2SK880GRTE85LF Toshiba

2SK880GRTE85LF electronic component of Toshiba
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Part No.2SK880GRTE85LF
Manufacturer: Toshiba
Category: JFET
Description: Toshiba JFET N-Ch Junction FET 10mA -50V VGDS
Datasheet: 2SK880GRTE85LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5793 ea
Line Total: USD 1.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5793
10 : USD 0.7518
100 : USD 0.4091
500 : USD 0.321
1000 : USD 0.2485
3000 : USD 0.2258

   
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RoHS - XON
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Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
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Package / Case
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Series
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Gate-Source Cutoff Voltage
Maximum Drain Gate Voltage
Factory Pack Quantity :
Type
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Mxhts
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We are delighted to provide the 2SK880GRTE85LF from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK880GRTE85LF and other electronic components in the JFET category and beyond.

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2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 100 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA SC-70 Please design the appropriate reliability upon reviewing the TOSHIBA 2-2E1B Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 0.006 g (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G NF (1) 5 I = 0.5 mA, f = 10 Hz D Noise figure dB V = 10 V, R = 1 k DS G NF (2) 1 I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA, BL: 6.0 to 14 mA DSS Marking Start of commercial production 1987-05 1 2014-03-01 2SK880 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Toshiba Memory Corporation
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TOSHIBA SEMICONDUCTORS
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