2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: V = 50 V GDS High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 100 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA SC-70 operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2E1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 0.3 6.5 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.4 5.0 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 1.2 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 8.2 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 2.6 pF rss GD D V = 15 V, V = 0 DS GS Noise figure NF 0.5 dB R = 100 k, f = 120 Hz G Note: I classification R: 0.30 to 0.75 mA, O: 0.60 to 1.40 mA, Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA DSS Marking Start of commercial production 1987-05 1 2014-03-01 2SK879 2 2014-03-01