J/SST201 Series Vishay Siliconix N-Channel JFETs J201 SST201 J202 SST202 J204 SST204 PRODUCT SUMMARY Part Number V (V) V Min (V) g Min (mS) I Min (mA) GS(off) (BR)GSS fs DSS J/SST201 0.3 to 1.5 40 0.5 0.2 J/SST202 0.8 to 4 40 1 0.9 J/SST204 0.3 to 2 25 0.5 0.2 FEATURES BENEFITS APPLICATIONS Low Cutoff Voltage: J201 <1.5 V Full Performance from Low Voltage High-Gain, Low-Noise Amplifiers Power Supply: Down to 1.5 V High Input Impedance Low-Current, Low-Voltage Low Signal Loss/System Error Battery-Powered Amplifiers Very Low Noise High System Sensitivity Infrared Detector Amplifiers High Gain: A = 80 20 A V High Quality Low-Level Signal Ultra High Input Impedance Amplification Pre-Amplifiers DESCRIPTION The J/SST201 series features low leakage, very low noise, are available in tape-and-reel for automated assembly (see and low cutoff voltage for use with low-level power supplies. Packaging Information). The J/SST201 is excellent for battery powered equipment and low current amplifiers. For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series For applications information see AN102 and AN106. TO-226AA TO-236 (TO-92) (SOT-23) 1 D D 1 3 G S 2 S 2 G 3 Top View SST201 (P1)* Top View SST202 (P2)* SST204 (P4)* J201 J202 *Marking Code for TO-236 J204 Document Number: 70233 www.vishay.com S-40393Rev. G, 15-Mar-04 1J/SST201 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Operating Junction Temperature . 55 to 150 C Gate-Drain, Gate-Source Voltage . 40 V a Power Dissipation . 350 mW Gate Current . 50 mA 1 Lead Temperature ( / from case for 10 sec.) . 300 C 16 Notes Storage Temperature . 55 to 150 C a. Derate 2.8 mW/ C above 25 C SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) A Limits c J/SST201 J/SST202 J/SST204 a Parameter Symbol Test Conditions Typ Min Max Min Max Min Max Unit Static Gate-Source V I = 1 A , V = 0 V 40 40 25 (BR)GSS G DS Breakdown Voltage VV Gate-Source Cutoff Voltage V V = 15 V, I = 10 nA 0.3 1.5 0.8 4 0.3 2 GS(off) DS D b Saturation Drain Current I V = 15 V, V = 0 V 0.2 1 0.9 4.5 0.2 3 mA DSS DS GS V = 20 V, V = 0 V 2 100 100 100 pA GS DS Gate Reverse CurrentGate Reverse Current II GSGSSS T = 125 C 1 nA A Gate Operating Current I V = 10 V, I = 0.1 mA 2 G DG D pApA Drain Cutoff Current I V = 15 V, V = 5 V 2 D(off) DS GS Gate-Source Forward Voltage V I = 1 mA , V = 0 V 0.7 V GS(F) G DS Dynamic Common-Source V = 15 V, V = 0 V DS GS g 0.5 1 0.5 mS fs Forward Transconductance f = 1 kHz Common-Source C 4.5 iss Input Capacitance VV = 15 V = 15 V,, V V = 0 V = 0 V DSDS GSGS pFpF f = 1 MHz Common-Source C 1.3 rss Reverse Transfer Capacitance V = 10 V, V = 0 V nV DS GS Equivalent Input Noise Voltage e 6 n f = 1 kHz Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH b. Pulse test: PW 300 s duty cycle 3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. Document Number: 70233 www.vishay.com S-40393Rev. G, 15-Mar-04 2