Product Technical OrOrdderer Folder Support NowNow InterFET IFN3954-5-6 IFN3954, IFN3955, IFN3956 Dual Matched N-Channel JFET TO-71 Bottom View Features Source InterFET N0016H Geometry 5 Drain 6 Typical Noise: 6 nV/Hz Low Ciss: 3.5pF Typical Gate 3 7 Gate High Input Impedance RoHS Compliant 2 Drain SMT, TH, and Bare Die Package options. 1 Source Applications SOIC8 Top View Differential Amplifiers Low Noise Pre-Amplifier Gate 1 8 Gate High Impedance Amplifier Drain 2 7 Source Source 3 6 Drain Description Gate 4 Gate The -50V InterFET IFN3954, IFN3955, and IFN3956 5 matched pair JFETs are targeted for high input impedance applications for mid to high frequency designs. Gate leakages are typically 10pA at room temperatures. Parts are matched down to 5mV. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN3954 Min IFN3955 Min IFN3956 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 -50 V I Drain to Source Saturation Current 0.5 0.5 0.5 mA DSS V Gate to Source Cutoff Voltage -1 -1 -1 V GS(off) GFS Forward Transconductance 1000 1000 1000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN3954 IFN3955 IFN3956 Through-Hole TO-71 Bulk SMP3954 SMP3955 SMP3956 Surface Mount SOIC8 Bulk SMP3954TR SMP3955TR 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMP3956TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFN3954COT IFN3955COT Chip Orientated Tray IFN3956COT * (COT Waffle Pack) COT 70/Waffle Pack IFN3954CFT IFN3955CFT Chip Face-up Tray IFN3956CFT * (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35008.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN3954-5-6 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 250 mW D P Power Derating 4.3 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN3954, IFN3955, IFN3956 Parameters Conditions Min Typ Max Unit Gate to Source V I = -1A,V = 0V -50 V (BR)GSS G DS Breakdown Voltage Gate to Source VGS = -30V, VDS = 0V, TA = 25C -100 pA I GSS Reverse Current VGS = -30V, VDS = 0V, TA = 125C -500 nA VDS = 20V, ID = 200A, TA = 25C -50 pA I Gate Operating Current G VDS = 20V, ID = 200A, TA = 125C -250 nA Gate to Source V V = -20V, I = 1nA -1 -4.5 V GS(OFF) DS G Cutoff Voltage V = 20V, I = 50A -4.2 DS D V Gate Source Voltage V GS VDS = 20V, ID = 200A -0.5 -4 Gate Source Forward V V = 0V, I = 1mA 2 V GS(F) DS G Voltage Drain to Source V = 20V, V = 0V DS GS I 0.5 5 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN3954, IFN3955, IFN3956 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, f = 1kHz 1000 3000 DS GS GFS S Transconductance V = 20V, V = 0V, f = 200MHz 1000 DS GS G Output Conductance V = 20V, f = 1kHz 35 S OS DS Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz 4 pF Crss Reverse Capacitance VDS = 20V, VGS = 0V, f = 1MHz 1.2 pF NF Noise Figure V = 20V, f = 10Hz, R = 10M 0.5 dB DS G Differential Gate I I VDS = 20V, ID = 200A, TA = 125C 10 nA G1 G2 Current Saturation Drain IDSS1/IDSS2 VDS = 20V, VGS = 0V 0.95 1 Current Ratio IFN3954 5 Differential Gate V V V = 20V, I = 200A IFN3955 10 mV GS1 GS2 DS D Source Voltage IFN3956 15 Differential Gate IFN3954 1 V V VDS = 20V, ID = 200A GS1 GS2 Source Voltage with IFN3955 2.5 mV/C T T = -55C to 125C O Temperature IFN3956 5 Transconductance g /g 0.97 1 fs1 fs2 VDS = 20V, ID = 200A, f = 1kHz Ratio IFN3954-5-6 2 of 4 InterFET Corporation Document Number: IF35008.R00 www.InterFET.com December, 2018