Product Technical OrOrdderer Folder Support NowNow InterFET 2N3821-2 2N3821, 2N3822 N-Channel JFET TO-72 Bottom View Features InterFET N0032H Geometry Gate 3 Typical Noise: 7 nV/Hz Low Ciss: 6.0pF Typical Drain 4 Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications VHF Amplifiers SOT23 Top View Small Signal Amplifier Source 1 Description Gate 3 The -50V InterFET 2N3821 and 2N3822 are targeted for sensitive amplifier stages for VHF Drain 2 designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military TO-92 Bottom View applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N3821 Min 2N3822 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 V I Drain to Source Saturation Current 0.5 2 mA DSS V Gate to Source Cutoff Voltage V GS(off) GFS Forward Transconductance 1500 3000 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N3821 2N3822 Through-Hole TO-72 Bulk PN3821 PN3822 Through-Hole TO-92 Bulk SMP3821 SMP3822 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP3821TR SMP3822TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N3821COT 2N3822COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N3821CFT 2N3822CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35036.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N3821-2 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N3821 2N3822 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -50 -50 V Breakdown Voltage -0.1 -0.1 Gate to Source VGS = -30V, VDS = 0V, TA = 25C nA IGSS Reverse Current V = -30V, V = 0V, T = 150C A GS DS A -0.1 -0.1 Gate to Source -0.5 -2 -1 -4 V V V = 15V, I = ( ) GS DS D Voltage (50) (50) (200) (200) A Gate to Source V V = 15V, I = 0.5nA -4 -6 V GS(OFF) DS D Cutoff Voltage Drain to Source VGS = 0V, VDS = 15V I 0.5 2.5 2 10 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N3821 2N3822 Parameters Conditions Min Max Min Max Unit Forward G V = 15V, V = 0V, f = 1kHz 1500 4500 3000 6500 S FS DS GS Transconductance Output G V = 15V, V = 0V, f = 1kHz 10 20 S OS DS GS Conductance Forward Y V = 15V, V = 0V, f = 100MHz 1500 3000 S DS GS fs Transmittance C Input Capacitance V = 15V, V = 0V, f = 1MHz 6 6 pF iss DS GS Reverse Transfer C V = 15V, V = 0V, f = 1MHz 2 2 pF rss DS GS Capacitance Equivalent Circuit V = 15V, V = 0V, f = 10Hz 200 200 DS GS nV/ Hz e n Input Noise Voltage VDS = 15V, VGS = 0V, f = 10Hz Noise Figure 5 5 dB NF RG = 1 M 2N3821-2 2 of 5 InterFET Corporation Document Number: IF35036.R00 www.InterFET.com December, 2018