Ordering number : ENA1370C 2SK4198FS N-Channel Power MOSFET 2SK4198FS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 600 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =480V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3 5 V GS DS D Forward Transfer Admittance yfs V =10V, I =2.5A 1.2 2.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =2.5A, V =10V 1.8 2.34 DS D GS Input Capacitance Ciss 360 pF Output Capacitance Coss V =30V, f=1MHz 69 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 13 ns d Rise Time t 28 ns r See Fig.2 Turn-OFF Delay Time t (off) 39 ns d Fall Time t 15 ns f Total Gate Charge Qg 14.3 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =5A 3.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 8.2 nC Diode Forward Voltage V I =5A, V =0V 0.9 1.2 V SD S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V =200V DD PW10s D.C.1% L I =2.5A D R =78 L 50 RG V OUT V =10V GS D 2SK4198FS G 10V 50 V DD 0V S P.G 50 2SK4198FS Ordering Information Device Package Shipping memo 2SK4198FS TO-220F-3FS 50pcs./magazine Pb Free No. A1370-2/7