2SK4094-1E ON Semiconductor

Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET 2SK4094 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =50A 45 75 S DS D R (on)1 I =50A, V =10V 3.8 5.0 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =50A, V =4V 4.9 7.0 m DS D GS Input Capacitance Ciss 12500 pF Output Capacitance Coss V =20V, f=1MHz 1200 pF DS Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time t (on) 80 ns d Rise Time t 630 ns r See Fig.2 Turn-OFF Delay Time t (off) 860 ns d Fall Time t 750 ns f Total Gate Charge Qg 220 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =100A 30 nC DS GS D Gate-to-Drain Miller Charge Qgd 55 nC Diode Forward Voltage V I =100A, V =0V 1.0 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =30V IN DD 10V L 0V I =50A D 50 V IN R =0.6 L D V OUT 2SK4094 PW=10s D.C.1% 10V 50 V DD 0V G 2SK4094 P.G 50 S Ordering Information Device Package Shipping memo 2SK4094-1E TO-220-3L 50pcs./magazine Pb Free No. A0523-2/7