Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET 2SK4066 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 E 850 mJ AS Avalanche Current *2 I 70 A AV Note : *1 V =30V, L=200H, I =70A (Fig.1) DD AV *2 L200H, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =50A 51 85 S DS D R (on)1 I =50A, V =10V 3.6 4.7 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =50A, V =4V 4.7 6.6 m DS D GS Input Capacitance Ciss 12500 pF Output Capacitance Coss V =20V, f=1MHz 1200 pF DS Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time t (on) 80 ns d Rise Time t 630 ns r See Fig.2 Turn-OFF Delay Time t (off) 860 ns d Fall Time t 750 ns f Total Gate Charge Qg 220 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =100A 31 nC DS GS D Gate-to-Drain Miller Charge Qgd 55 nC Diode Forward Voltage V I =100A, V =0V 0.9 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =30V IN DD 10V L 0V I =50A D 50 V IN R =0.6 L D V OUT 2SK4066 PW=10s D.C.1% 10V 50 V DD 0V G 2SK4066 P.G 50 S Ordering Information Device Package Shipping memo 2SK4066-1E TO-262-3L 50pcs./magazine Pb Free 2SK4066-DL-1E TO-263-2L 800pcs./reel No. A0225-2/9