2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L MOS V) 2SK4018 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. z 4-V gate drive Loz w drain source ON-resistance: R = 0.28 (typ.) DS (ON) z High forward transfer admittance: Y = 3.5 S (typ.) fs z Low leakage current: I = 100 A (max) (V = 100 V) DSS DS 1.1 0.2 0.9 z Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 1 mA) th DS D 0.6 MAX. Absolute Maximum Ratings (Ta = 25C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain source voltage V 100 V DSS 0.8 MAX. Drain gate voltage (R = 20 k) V 100 V 0.6 0.15 GS DGR 1.1 MAX. Gatesource voltage V 20 V GSS 0.6 0.15 DC (Note 1) I 3 A 2 D 1. GATE Drain current 1 2. DRAIN Pulse (Note 1) I 12 A DP HEAT SINK 3. SOURSE Drain power dissipation (Tc = 25C) P 20 W 3 D Single-pulse avalanche energy JEDEC E 140 mJ AS (Note 2) JEITA Avalanche current I 3 A AR TOSHIBA 2-7J2B Repetitive avalanche energy (Note 3) E 2 mJ AR Channel temperature T 150 C Weight: 0.36 g (typ.) ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 C / W th (chc) Thermal resistance, channel to ambient R 125 C / W th (cha) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 50 V, T = 25C (initial), L = 25 mH, R = 25 , I = 3 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 4.1 0.2 1.6 2.3 0.2 5.7 1.5 0.2 5.5 0.2 2SK4018 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Drain cutoff current I V = 100 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 100 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 0.8 2.0 V th DS D V = 4 V, I = 2 A 0.36 0.45 GS D Drain source ON-resistance R DS (ON) V = 10 V, I = 2 A 0.28 0.35 GS D Forward transfer admittance Y V = 10 V, I = 2 A 1.5 3.5 S fs DS D Input capacitance C 280 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 50 pF rss DS GS Output capacitance C 105 oss Rise time t 20 r Turn on time t 50 on Switching time ns Fall time t 40 f Turn off time t 170 off Total gate charge (gatesource Q 13.5 g plus gate drain) V 80 V, V = 10 V, I = 3 A nC DD GS D Gatesource charge Q 8.5 gs Gatedrain (Miller) charge Q 5 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 3 A DR (Note 1) Pulse drain reverse current I 12 A DRP (Note 1) Forward voltage (diode) V I = 3 A, V = 0 V 1.5 V DSF DR GS Reverse recovery time t 100 ns rr I = 3 A, V = 0 V, dI / dt = 50 A / s DR GS DR Reverse recovery charge Q 0.2 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. K4018 Part No. (or abbreviation code) G /RoHS COMPATIBLE or G /RoHS Pb Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29