X-On Electronics has gained recognition as a prominent supplier of 2SK4018(Q) MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK4018(Q) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK4018(Q) Toshiba

2SK4018(Q) electronic component of Toshiba
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Part No.2SK4018(Q)
Manufacturer: Toshiba
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 3A 3-Pin(3+Tab) PW-Mold2
Datasheet: 2SK4018(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 0.985 ea
Line Total: USD 24.62 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 25
Multiples : 25
25 : USD 0.985
50 : USD 0.461
100 : USD 0.4225
200 : USD 0.4106
800 : USD 0.363

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Package Type
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We are delighted to provide the 2SK4018(Q) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK4018(Q) and other electronic components in the MOSFETs category and beyond.

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2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L MOS V) 2SK4018 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. z 4-V gate drive Loz w drain source ON-resistance: R = 0.28 (typ.) DS (ON) z High forward transfer admittance: Y = 3.5 S (typ.) fs z Low leakage current: I = 100 A (max) (V = 100 V) DSS DS 1.1 0.2 0.9 z Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 1 mA) th DS D 0.6 MAX. Absolute Maximum Ratings (Ta = 25C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain source voltage V 100 V DSS 0.8 MAX. Drain gate voltage (R = 20 k) V 100 V 0.6 0.15 GS DGR 1.1 MAX. Gatesource voltage V 20 V GSS 0.6 0.15 DC (Note 1) I 3 A 2 D 1. GATE Drain current 1 2. DRAIN Pulse (Note 1) I 12 A DP HEAT SINK 3. SOURSE Drain power dissipation (Tc = 25C) P 20 W 3 D Single-pulse avalanche energy JEDEC E 140 mJ AS (Note 2) JEITA Avalanche current I 3 A AR TOSHIBA 2-7J2B Repetitive avalanche energy (Note 3) E 2 mJ AR Channel temperature T 150 C Weight: 0.36 g (typ.) ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 C / W th (chc) Thermal resistance, channel to ambient R 125 C / W th (cha) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 50 V, T = 25C (initial), L = 25 mH, R = 25 , I = 3 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 4.1 0.2 1.6 2.3 0.2 5.7 1.5 0.2 5.5 0.2 2SK4018 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Drain cutoff current I V = 100 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 100 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 0.8 2.0 V th DS D V = 4 V, I = 2 A 0.36 0.45 GS D Drain source ON-resistance R DS (ON) V = 10 V, I = 2 A 0.28 0.35 GS D Forward transfer admittance Y V = 10 V, I = 2 A 1.5 3.5 S fs DS D Input capacitance C 280 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 50 pF rss DS GS Output capacitance C 105 oss Rise time t 20 r Turn on time t 50 on Switching time ns Fall time t 40 f Turn off time t 170 off Total gate charge (gatesource Q 13.5 g plus gate drain) V 80 V, V = 10 V, I = 3 A nC DD GS D Gatesource charge Q 8.5 gs Gatedrain (Miller) charge Q 5 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 3 A DR (Note 1) Pulse drain reverse current I 12 A DRP (Note 1) Forward voltage (diode) V I = 3 A, V = 0 V 1.5 V DSF DR GS Reverse recovery time t 100 ns rr I = 3 A, V = 0 V, dI / dt = 50 A / s DR GS DR Reverse recovery charge Q 0.2 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. K4018 Part No. (or abbreviation code) G /RoHS COMPATIBLE or G /RoHS Pb Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Toshiba Memory Corporation
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TOSHIBA SEMICONDUCTORS
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